Abstract
This article was originally published online on 7 July 2022 with errors on pages 5 and 6. In the paragraph starting with “This work was supposed…” a sentence was deleted, and a sentence was added to the end of the paragraph. The added sentence is “The authors are thankful to Saroj Prasad Dash for his assistance with the measurement equipment.” On page 6, the fourth line from the top, “Anamul Md Hoque: Data curation (equal); Validation (equal)” was added. All online versions of this article were corrected on 29 July 2022. AIP Publishing apologizes for these errors.
| Original language | English |
|---|---|
| Article number | 119901 |
| Pages (from-to) | 121 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| Volume | 121 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2022 |
| MoE publication type | B1 Article in a scientific magazine |
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Dive into the research topics of 'Publisher's Note: Geometrical magnetoresistance effect and mobility in graphene field-effect transistors (Appl. Phys. Lett. (2022) 121 (013502) DOI: 10.1063/5.0088564)'. Together they form a unique fingerprint.Research output
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Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
Harrysson Rodrigues, I., Generalov, A., Soikkeli, M., Murros, A., Arpiainen, S. & Vorobiev, A., 7 Jul 2022, In: Applied Physics Letters. 121, 013502.Research output: Contribution to journal › Article › Scientific › peer-review
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