Publisher's Note: Geometrical magnetoresistance effect and mobility in graphene field-effect transistors (Appl. Phys. Lett. (2022) 121 (013502) DOI: 10.1063/5.0088564)
- Isabel Harrysson Rodrigues*
- , Andrey Generalov
- , Anamul Md Hoque
- , Miika Soikkeli
- , Anton Murros
- , Sanna Arpiainen
- , Andrei Vorobiev
*Corresponding author for this work
- Chalmers University of Technology
Research output: Contribution to journal › Other journal contribution › Scientific