Pulsed laser deposition of organic semiconductor Rubrene thin films

K. Grochowska, S. Majumdar, P. Laukkanen, H. S. Majumdar, M. Sawczak, G. Sliwinski

Research output: Chapter in Book/Report/Conference proceedingChapter or book articleScientificpeer-review

5 Citations (Scopus)

Abstract

Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V∙s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.
Original languageEnglish
Title of host publication18th International School on Quantum Electronics: Laser Physics and Applications
PublisherInternational Society for Optics and Photonics SPIE
DOIs
Publication statusPublished - 2015
MoE publication typeA3 Part of a book or another research book

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9447

Fingerprint

organic semiconductors
pulsed laser deposition
thin films
organic materials
diffusion length
defects
hole mobility
pellets
thick films
self assembly
YAG lasers
pulsed lasers
fluence
light emitting diodes
field effect transistors
grain boundaries
tuning
signatures
atomic force microscopy
Raman spectra

Cite this

Grochowska, K., Majumdar, S., Laukkanen, P., Majumdar, H. S., Sawczak, M., & Sliwinski, G. (2015). Pulsed laser deposition of organic semiconductor Rubrene thin films. In 18th International School on Quantum Electronics: Laser Physics and Applications [94470F] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 9447 https://doi.org/10.1117/12.2176009
Grochowska, K. ; Majumdar, S. ; Laukkanen, P. ; Majumdar, H. S. ; Sawczak, M. ; Sliwinski, G. / Pulsed laser deposition of organic semiconductor Rubrene thin films. 18th International School on Quantum Electronics: Laser Physics and Applications. International Society for Optics and Photonics SPIE, 2015. (Proceedings of SPIE, Vol. 9447).
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abstract = "Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V∙s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.",
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Grochowska, K, Majumdar, S, Laukkanen, P, Majumdar, HS, Sawczak, M & Sliwinski, G 2015, Pulsed laser deposition of organic semiconductor Rubrene thin films. in 18th International School on Quantum Electronics: Laser Physics and Applications., 94470F, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 9447. https://doi.org/10.1117/12.2176009

Pulsed laser deposition of organic semiconductor Rubrene thin films. / Grochowska, K.; Majumdar, S.; Laukkanen, P.; Majumdar, H. S.; Sawczak, M.; Sliwinski, G.

18th International School on Quantum Electronics: Laser Physics and Applications. International Society for Optics and Photonics SPIE, 2015. 94470F (Proceedings of SPIE, Vol. 9447).

Research output: Chapter in Book/Report/Conference proceedingChapter or book articleScientificpeer-review

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AU - Grochowska, K.

AU - Majumdar, S.

AU - Laukkanen, P.

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AU - Sawczak, M.

AU - Sliwinski, G.

PY - 2015

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N2 - Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V∙s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.

AB - Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V∙s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.

U2 - 10.1117/12.2176009

DO - 10.1117/12.2176009

M3 - Chapter or book article

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BT - 18th International School on Quantum Electronics: Laser Physics and Applications

PB - International Society for Optics and Photonics SPIE

ER -

Grochowska K, Majumdar S, Laukkanen P, Majumdar HS, Sawczak M, Sliwinski G. Pulsed laser deposition of organic semiconductor Rubrene thin films. In 18th International School on Quantum Electronics: Laser Physics and Applications. International Society for Optics and Photonics SPIE. 2015. 94470F. (Proceedings of SPIE, Vol. 9447). https://doi.org/10.1117/12.2176009