Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V. Lotkhov (Corresponding Author), Antti Kemppinen, S. Kafanov, J.P. Pekola, A.B. Zorin

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.
Original languageEnglish
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number11
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

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single electron transistors
pumping
resistors
leakage
transistors
heating
electronics
metals

Cite this

Lotkhov, S.V. ; Kemppinen, Antti ; Kafanov, S. ; Pekola, J.P. ; Zorin, A.B. / Pumping properties of the hybrid single-electron transistor in dissipative environment. In: Applied Physics Letters. 2009 ; Vol. 95, No. 11.
@article{a34972c021ac408d97c5061837507f08,
title = "Pumping properties of the hybrid single-electron transistor in dissipative environment",
abstract = "Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.",
author = "S.V. Lotkhov and Antti Kemppinen and S. Kafanov and J.P. Pekola and A.B. Zorin",
year = "2009",
doi = "10.1063/1.3227839",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "11",

}

Pumping properties of the hybrid single-electron transistor in dissipative environment. / Lotkhov, S.V. (Corresponding Author); Kemppinen, Antti; Kafanov, S.; Pekola, J.P.; Zorin, A.B.

In: Applied Physics Letters, Vol. 95, No. 11, 2009.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Pumping properties of the hybrid single-electron transistor in dissipative environment

AU - Lotkhov, S.V.

AU - Kemppinen, Antti

AU - Kafanov, S.

AU - Pekola, J.P.

AU - Zorin, A.B.

PY - 2009

Y1 - 2009

N2 - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

AB - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

U2 - 10.1063/1.3227839

DO - 10.1063/1.3227839

M3 - Article

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -