Abstract
Original language | English |
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Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2009 |
MoE publication type | A1 Journal article-refereed |
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Pumping properties of the hybrid single-electron transistor in dissipative environment. / Lotkhov, S.V. (Corresponding Author); Kemppinen, Antti; Kafanov, S.; Pekola, J.P.; Zorin, A.B.
In: Applied Physics Letters, Vol. 95, No. 11, 2009.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Pumping properties of the hybrid single-electron transistor in dissipative environment
AU - Lotkhov, S.V.
AU - Kemppinen, Antti
AU - Kafanov, S.
AU - Pekola, J.P.
AU - Zorin, A.B.
PY - 2009
Y1 - 2009
N2 - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.
AB - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.
U2 - 10.1063/1.3227839
DO - 10.1063/1.3227839
M3 - Article
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -