Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2009|
|MoE publication type||A1 Journal article-refereed|