Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V. Lotkhov; Antti Kemppinen; S. Kafanov; J.P. Pekola; A.B. Zorin

doi:10.1063/1.3227839

Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V. Lotkhov (Corresponding Author), Antti Kemppinen, S. Kafanov, J.P. Pekola, A.B. Zorin

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Abstract

Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrO_xwith a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

Original language	English
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3227839
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.3227839

Fingerprint Dive into the research topics of 'Pumping properties of the hybrid single-electron transistor in dissipative environment'. Together they form a unique fingerprint.

Cite this

@article{a34972c021ac408d97c5061837507f08,

title = "Pumping properties of the hybrid single-electron transistor in dissipative environment",

abstract = "Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.",

author = "S.V. Lotkhov and Antti Kemppinen and S. Kafanov and J.P. Pekola and A.B. Zorin",

year = "2009",

doi = "10.1063/1.3227839",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "11",

}

TY - JOUR

T1 - Pumping properties of the hybrid single-electron transistor in dissipative environment

AU - Lotkhov, S.V.

AU - Kemppinen, Antti

AU - Kafanov, S.

AU - Pekola, J.P.

AU - Zorin, A.B.

PY - 2009

Y1 - 2009

N2 - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

AB - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

U2 - 10.1063/1.3227839

DO - 10.1063/1.3227839

M3 - Article

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -