Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V. Lotkhov; Antti Kemppinen; S. Kafanov; J.P. Pekola; A.B. Zorin

doi:10.1063/1.3227839

Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V. Lotkhov (Corresponding Author), Antti Kemppinen, S. Kafanov, J.P. Pekola, A.B. Zorin

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Abstract

Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrO_xwith a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

Original language	English
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3227839
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

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Lotkhov, S. V., Kemppinen, A., Kafanov, S., Pekola, J. P., & Zorin, A. B. (2009). Pumping properties of the hybrid single-electron transistor in dissipative environment. Applied Physics Letters, 95(11). https://doi.org/10.1063/1.3227839

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