Quantitative phase field modeling of solute trapping and continuous growth kinetics in quasi-rapid solidification

Solute trapping is an important phenomenon in rapid solidification of alloys, for which the continuous growth model (CGM) of Aziz et al. [1] is a popular sharp interface theory. By modulating the so-called anti-trapping current and using asymptotic analysis, we show how to quantitatively map the thin interface behavior of an ideal dilute binary alloy phase field model onto the CGM kinetics. We present the parametrizations that allow our phase field model to map onto the sharp interface kinetics of the CGM, both in terms of partition coefficient k(V) and kinetic undercooling. We also show that the mapping is convergent for different interface widths, both in transient and steady state simulations. Finally we present the effect that solute trapping can have on cellular growth in directional solidification. The presented treatment for solute trapping can be easily implemented in different phase field models, and is expected to be an important feature in future studies of quantitative phase field modeling in quasi-rapid solidification regimes, such as those relevant to metal additive manufacturing.