Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Gianluca Milano (Corresponding Author), Masakazu Aono, Luca Boarino, Umberto Celano, Tsuyoshi Hasegawa, Michael Kozicki, Sayani Majumdar, Mariela Menghini, Enrique Miranda, Carlo Ricciardi, Stefan Tappertzhofen, Kazuya Terabe, Ilia Valov

Research output: Contribution to journalReview Articlepeer-review

38 Citations (Scopus)


Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.

Original languageEnglish
Article number2201248
Number of pages30
JournalAdvanced Materials
Issue number32
Early online date11 Apr 2022
Publication statusPublished - 11 Aug 2022
MoE publication typeA2 Review article in a scientific journal


  • ballistic transport
  • memristive devices
  • quantized conductance
  • quantum conductance
  • resistive switching


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