Quantum corrections to the threshold voltage of short channel MOSFETs

Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review


An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.
Original languageEnglish
Pages (from-to)154-156
JournalPhysica Scripta
Issue numberT54
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed
Event16th Nordic Semiconductor Meeting - Laugarvatn, Iceland
Duration: 12 Jun 199415 Jun 1994


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