An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.
|Number of pages||3|
|Publication status||Published - 1994|
|MoE publication type||A1 Journal article-refereed|
|Event||16th Nordic Semiconductor Meeting - Laugarvatn, Iceland|
Duration: 12 Jun 1994 → 15 Jun 1994