Quantum corrections to the threshold voltage of short channel MOSFETs

Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.
Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed
Event16th Nordic Semiconductor Meeting. Langarvatn, Iceland, 12 - 15 June 1994. Posteri -
Duration: 1 Jan 1994 → …

Fingerprint

MOSFET
threshold voltage
field effect transistors
Voltage
Electron
Variational Solution
electrons
Analytical Model
charge distribution
Inversion
Charge
inversions
shift
Model

Cite this

Kuivalainen, Pekka. / Quantum corrections to the threshold voltage of short channel MOSFETs. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 154-156.
@article{009245bbf15f49a5b9ca784cbbb81602,
title = "Quantum corrections to the threshold voltage of short channel MOSFETs",
abstract = "An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schr{\"o}dinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.",
author = "Pekka Kuivalainen",
note = "Project code: ELE41061",
year = "1994",
doi = "10.1088/0031-8949/1994/T54/037",
language = "English",
volume = "1994",
pages = "154--156",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",
number = "T54",

}

Quantum corrections to the threshold voltage of short channel MOSFETs. / Kuivalainen, Pekka.

In: Physica Scripta, Vol. 1994, No. T54, 1994, p. 154-156.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Quantum corrections to the threshold voltage of short channel MOSFETs

AU - Kuivalainen, Pekka

N1 - Project code: ELE41061

PY - 1994

Y1 - 1994

N2 - An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.

AB - An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.

U2 - 10.1088/0031-8949/1994/T54/037

DO - 10.1088/0031-8949/1994/T54/037

M3 - Article

VL - 1994

SP - 154

EP - 156

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T54

ER -