Quantum corrections to the threshold voltage of short channel MOSFETs

Pekka Kuivalainen

doi:10.1088/0031-8949/1994/T54/037

Quantum corrections to the threshold voltage of short channel MOSFETs

Pekka Kuivalainen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage V_T MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on V_T. Without any fitting parameters the model explains well the measured quantum shifts of V_T.

Original language	English
Pages (from-to)	154-156
Journal	Physica Scripta Topical Issues
Volume	1994
Issue number	T54
DOIs	https://doi.org/10.1088/0031-8949/1994/T54/037
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed
Event	16th Nordic Semiconductor Meeting - Laugarvatn, Iceland Duration: 12 Jun 1994 → 15 Jun 1994

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10.1088/0031-8949/1994/T54/037

Cite this

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title = "Quantum corrections to the threshold voltage of short channel MOSFETs",

abstract = "An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schr{\"o}dinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.",

author = "Pekka Kuivalainen",

note = "Project code: ELE41061; 16th Nordic Semiconductor Meeting ; Conference date: 12-06-1994 Through 15-06-1994",

year = "1994",

doi = "10.1088/0031-8949/1994/T54/037",

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T1 - Quantum corrections to the threshold voltage of short channel MOSFETs

AU - Kuivalainen, Pekka

N1 - Project code: ELE41061

PY - 1994

Y1 - 1994

N2 - An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.

AB - An analytical model is developed which accounts the quantum mechanical corrections to the threshold voltage VT MOSFETs having their channel lengths in deep submicron region. The model is based on a variational solution of the Schrödinger equation for electrons in an inversion layer of a MOSFET, and it takes into account effects of the quantized electrons, the electron charge distribution and bandgap narrowing on VT. Without any fitting parameters the model explains well the measured quantum shifts of VT.

U2 - 10.1088/0031-8949/1994/T54/037

DO - 10.1088/0031-8949/1994/T54/037

M3 - Article

SN - 0281-1847

VL - 1994

SP - 154

EP - 156

JO - Physica Scripta Topical Issues

JF - Physica Scripta Topical Issues

IS - T54

T2 - 16th Nordic Semiconductor Meeting

Y2 - 12 June 1994 through 15 June 1994

ER -

Quantum corrections to the threshold voltage of short channel MOSFETs

Abstract

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