Qubit-Compatible Substrates With Superconducting Through-Silicon Vias

Kestutis Grigoras, Nikolai Yurttagul, Jukka-Pekka Kaikkonen, Elsa T. Mannila (Corresponding Author), Patrik Eskelinen, D. P. Lozano, H.-X. Li, M. Rommel, D. Shiri, Nils Tiencken, Slawomir Simbierowicz, Alberto Ronzani, Joel Hätinen, Debopam Datta, Visa Vesterinen, Leif Grönberg, J. Biznarova, A. Fadavi Roudsari, S. Kosen, A. OsmanMika Prunnila, Juha Hassel, J. Bylander, Joonas Govenius

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips and is a first step toward more complex quantum devices with 3-D integration.

Original languageEnglish
Article number5100310
Number of pages11
JournalIEEE Transactions on Quantum Engineering
Volume3
DOIs
Publication statusPublished - 2022
MoE publication typeA1 Journal article-refereed

Keywords

  • Through-silicon vias
  • Resonators
  • Qubit
  • Q-factor
  • Superconducting microwave devices
  • quantum coherence
  • superconducting through-silicon via
  • TSV
  • tantalum
  • titanium nitride
  • High-Q resonator
  • Semiconductor device measurement
  • Electrodes
  • superconducting through-silicon via (TSV)

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