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Qubit-Compatible Substrates With Superconducting Through-Silicon Vias

*Corresponding author for this work
  • Chalmers University of Technology

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips and is a first step toward more complex quantum devices with 3-D integration.

Original languageEnglish
Article number5100310
Number of pages11
JournalIEEE Transactions on Quantum Engineering
Volume3
DOIs
Publication statusPublished - 2022
MoE publication typeA1 Journal article-refereed

Funding

This work was supported in part by OpenSuperQ, which has received funding from the European Union’s Horizon 2020 Research and Innovation Programme under Grant 820363. The work at VTT was supported by the Quantum Computer Codevelopment Project funded by the Finnish government and performed as part of the Academy of Finland Centre of Excellence program under Project 336817, Project 312059, and Project 312294. This work was also supported by the European Commission H2020 project EFINED under Grant 766853. The Chalmers work was supported in part by the Wallenberg Center for Quantum Technology and performed at Myfab Chalmers. The work of V. Vesterinen was supported by the Academy of Finland under Grant 321700.

Keywords

  • Through-silicon vias
  • Resonators
  • Qubit
  • Q-factor
  • Superconducting microwave devices
  • quantum coherence
  • superconducting through-silicon via
  • TSV
  • tantalum
  • titanium nitride
  • High-Q resonator
  • Semiconductor device measurement
  • Electrodes
  • superconducting through-silicon via (TSV)

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