Quick and clean: Stencil lithography for wafer-scale fabrication of superconducting tunnel junctions

V. Savu, Jani Kivioja, Jouni Ahopelto, J. Brugger

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mum accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show stencil lithography is a good candidate for parallel, resist-less patterning of sub-micrometer area tunnel junctions. Challenges are addressed and further developments are proposed.
Original languageEnglish
Pages (from-to)242-244
Number of pages3
JournalIEEE Transactions on Applied Superconductivity
Volume19
Issue number3
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Tunnel junctions
tunnel junctions
Lithography
micrometers
lithography
wafers
Fabrication
fabrication
electric contacts
apertures
membranes
Membranes
Oxidation
oxidation
Electrodes
electrodes
Substrates

Keywords

  • Shadow mask
  • Stencil lithography
  • STJ
  • Superconducting tunnel junction

Cite this

@article{e43b2073684d47bab3c7198077bdd06f,
title = "Quick and clean: Stencil lithography for wafer-scale fabrication of superconducting tunnel junctions",
abstract = "This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mum accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show stencil lithography is a good candidate for parallel, resist-less patterning of sub-micrometer area tunnel junctions. Challenges are addressed and further developments are proposed.",
keywords = "Shadow mask, Stencil lithography, STJ, Superconducting tunnel junction",
author = "V. Savu and Jani Kivioja and Jouni Ahopelto and J. Brugger",
year = "2009",
doi = "10.1109/TASC.2009.2019075",
language = "English",
volume = "19",
pages = "242--244",
journal = "IEEE Transactions on Applied Superconductivity",
issn = "1051-8223",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
number = "3",

}

Quick and clean : Stencil lithography for wafer-scale fabrication of superconducting tunnel junctions. / Savu, V.; Kivioja, Jani; Ahopelto, Jouni; Brugger, J.

In: IEEE Transactions on Applied Superconductivity, Vol. 19, No. 3, 2009, p. 242-244.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Quick and clean

T2 - Stencil lithography for wafer-scale fabrication of superconducting tunnel junctions

AU - Savu, V.

AU - Kivioja, Jani

AU - Ahopelto, Jouni

AU - Brugger, J.

PY - 2009

Y1 - 2009

N2 - This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mum accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show stencil lithography is a good candidate for parallel, resist-less patterning of sub-micrometer area tunnel junctions. Challenges are addressed and further developments are proposed.

AB - This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mum accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show stencil lithography is a good candidate for parallel, resist-less patterning of sub-micrometer area tunnel junctions. Challenges are addressed and further developments are proposed.

KW - Shadow mask

KW - Stencil lithography

KW - STJ

KW - Superconducting tunnel junction

U2 - 10.1109/TASC.2009.2019075

DO - 10.1109/TASC.2009.2019075

M3 - Article

VL - 19

SP - 242

EP - 244

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

SN - 1051-8223

IS - 3

ER -