Abstract
This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mum accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show stencil lithography is a good candidate for parallel, resist-less patterning of sub-micrometer area tunnel junctions. Challenges are addressed and further developments are proposed.
Original language | English |
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Pages (from-to) | 242-244 |
Number of pages | 3 |
Journal | IEEE Transactions on Applied Superconductivity |
Volume | 19 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Shadow mask
- Stencil lithography
- STJ
- Superconducting tunnel junction