Abstract
This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mum accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show stencil lithography is a good candidate for parallel, resist-less patterning of sub-micrometer area tunnel junctions. Challenges are addressed and further developments are proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 242-244 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- Shadow mask
- Stencil lithography
- STJ
- Superconducting tunnel junction