Radiation Detector Activity at VTT

Juha Kalliopuska, Simo Eränen, Tuula Virolainen, Sami Vähänen, Risto Orava, Nick van Remortel, Francisco Garcia, Marko Santala, Ji: Nenonen, Seppo Fan, Hans Andersson

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    VTT is a nonprofit research organization employing about 2700 persons. It is the largest R&D institution in Northern Europe and is part of the Finnish innovation system. VTT has a two decades experience, since 1989, on manufacturing and designing silicon radiation detector structures. The activities cover a range of industrial devices as well as the devices for the physics experiments. VTT is one of the forerun-ners for the 3D and edgeless detector technologies. Recently VTT has done processing development for the compound semiconductor materials, aspecially CdTe patterning and pixelization. An overview on the radiation detector activity at VTT is given and a Through-Wafer-Interconnect (TWI) technology is introduced. The state-of-the-art processing on 6” (150 mm) wafer relies on utiliza-tion of bonded support wafer in the final detector or during the fabrication of the detector, allowing fab-rication of very thin microstrip detectors, and trench etching through the wafer during the process of the 3D and edgeless detectors. The first thin detectors fabricated on Silicon-On-Insulator (SOI) wafers had a microstrip geometry and were designed for the Neutral Particle Analyser (NPA) setup for JET. This design overcomes the issues faced with the current a scintillator-photomultiplier combination that suffers from the background radiation and the particle identification is possible only for the energetic ions. The edgeless detector design offers some attractive properties for the high energy physics experiments and medical imaging studies. The processing is done on the bonded support wafer, which is removed at the end of the fabrication. We present here a new straight forward and fast way to fabricate these detec-tors that is realized using a side wall ion-implantation and non-planar lithography. The first results of the prototypes are presented. The TWI-technology has been developed for the large imaging matrices. The special application in the view is the computed tomography in the field of medical imaging. The TWI-technology has also been adopted for the industrial applications.
    Original languageEnglish
    Publication statusPublished - 2009
    MoE publication typeNot Eligible
    Event43rd annual meeting of the Finnish Physical Society - Espoo, Finland
    Duration: 12 Mar 200914 Mar 2009

    Seminar

    Seminar43rd annual meeting of the Finnish Physical Society
    CountryFinland
    CityEspoo
    Period12/03/0914/03/09

    Fingerprint

    radiation detectors
    wafers
    detectors
    silicon radiation detectors
    fabrication
    physics
    background radiation
    neutral particles
    scintillation counters
    ion implantation
    lithography
    manufacturing
    tomography
    prototypes
    insulators
    etching
    silicon
    matrices
    geometry

    Keywords

    • SOI
    • thin detector
    • ion-implantation
    • edgeless detector
    • CdTe detector
    • pixelization
    • Through-wafer-Interconnection

    Cite this

    Kalliopuska, J., Eränen, S., Virolainen, T., Vähänen, S., Orava, R., van Remortel, N., ... Andersson, H. (2009). Radiation Detector Activity at VTT. Paper presented at 43rd annual meeting of the Finnish Physical Society, Espoo, Finland.
    Kalliopuska, Juha ; Eränen, Simo ; Virolainen, Tuula ; Vähänen, Sami ; Orava, Risto ; van Remortel, Nick ; Garcia, Francisco ; Santala, Marko ; Fan, Ji: Nenonen, Seppo ; Andersson, Hans. / Radiation Detector Activity at VTT. Paper presented at 43rd annual meeting of the Finnish Physical Society, Espoo, Finland.
    @conference{fef2487809774ce1b6a3a5fb8d29601f,
    title = "Radiation Detector Activity at VTT",
    abstract = "VTT is a nonprofit research organization employing about 2700 persons. It is the largest R&D institution in Northern Europe and is part of the Finnish innovation system. VTT has a two decades experience, since 1989, on manufacturing and designing silicon radiation detector structures. The activities cover a range of industrial devices as well as the devices for the physics experiments. VTT is one of the forerun-ners for the 3D and edgeless detector technologies. Recently VTT has done processing development for the compound semiconductor materials, aspecially CdTe patterning and pixelization. An overview on the radiation detector activity at VTT is given and a Through-Wafer-Interconnect (TWI) technology is introduced. The state-of-the-art processing on 6” (150 mm) wafer relies on utiliza-tion of bonded support wafer in the final detector or during the fabrication of the detector, allowing fab-rication of very thin microstrip detectors, and trench etching through the wafer during the process of the 3D and edgeless detectors. The first thin detectors fabricated on Silicon-On-Insulator (SOI) wafers had a microstrip geometry and were designed for the Neutral Particle Analyser (NPA) setup for JET. This design overcomes the issues faced with the current a scintillator-photomultiplier combination that suffers from the background radiation and the particle identification is possible only for the energetic ions. The edgeless detector design offers some attractive properties for the high energy physics experiments and medical imaging studies. The processing is done on the bonded support wafer, which is removed at the end of the fabrication. We present here a new straight forward and fast way to fabricate these detec-tors that is realized using a side wall ion-implantation and non-planar lithography. The first results of the prototypes are presented. The TWI-technology has been developed for the large imaging matrices. The special application in the view is the computed tomography in the field of medical imaging. The TWI-technology has also been adopted for the industrial applications.",
    keywords = "SOI, thin detector, ion-implantation, edgeless detector, CdTe detector, pixelization, Through-wafer-Interconnection",
    author = "Juha Kalliopuska and Simo Er{\"a}nen and Tuula Virolainen and Sami V{\"a}h{\"a}nen and Risto Orava and {van Remortel}, Nick and Francisco Garcia and Marko Santala and Fan, {Ji: Nenonen, Seppo} and Hans Andersson",
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    Kalliopuska, J, Eränen, S, Virolainen, T, Vähänen, S, Orava, R, van Remortel, N, Garcia, F, Santala, M, Fan, JNS & Andersson, H 2009, 'Radiation Detector Activity at VTT' Paper presented at 43rd annual meeting of the Finnish Physical Society, Espoo, Finland, 12/03/09 - 14/03/09, .

    Radiation Detector Activity at VTT. / Kalliopuska, Juha; Eränen, Simo; Virolainen, Tuula; Vähänen, Sami; Orava, Risto; van Remortel, Nick; Garcia, Francisco; Santala, Marko; Fan, Ji: Nenonen, Seppo; Andersson, Hans.

    2009. Paper presented at 43rd annual meeting of the Finnish Physical Society, Espoo, Finland.

    Research output: Contribution to conferenceConference articleScientific

    TY - CONF

    T1 - Radiation Detector Activity at VTT

    AU - Kalliopuska, Juha

    AU - Eränen, Simo

    AU - Virolainen, Tuula

    AU - Vähänen, Sami

    AU - Orava, Risto

    AU - van Remortel, Nick

    AU - Garcia, Francisco

    AU - Santala, Marko

    AU - Fan, Ji: Nenonen, Seppo

    AU - Andersson, Hans

    PY - 2009

    Y1 - 2009

    N2 - VTT is a nonprofit research organization employing about 2700 persons. It is the largest R&D institution in Northern Europe and is part of the Finnish innovation system. VTT has a two decades experience, since 1989, on manufacturing and designing silicon radiation detector structures. The activities cover a range of industrial devices as well as the devices for the physics experiments. VTT is one of the forerun-ners for the 3D and edgeless detector technologies. Recently VTT has done processing development for the compound semiconductor materials, aspecially CdTe patterning and pixelization. An overview on the radiation detector activity at VTT is given and a Through-Wafer-Interconnect (TWI) technology is introduced. The state-of-the-art processing on 6” (150 mm) wafer relies on utiliza-tion of bonded support wafer in the final detector or during the fabrication of the detector, allowing fab-rication of very thin microstrip detectors, and trench etching through the wafer during the process of the 3D and edgeless detectors. The first thin detectors fabricated on Silicon-On-Insulator (SOI) wafers had a microstrip geometry and were designed for the Neutral Particle Analyser (NPA) setup for JET. This design overcomes the issues faced with the current a scintillator-photomultiplier combination that suffers from the background radiation and the particle identification is possible only for the energetic ions. The edgeless detector design offers some attractive properties for the high energy physics experiments and medical imaging studies. The processing is done on the bonded support wafer, which is removed at the end of the fabrication. We present here a new straight forward and fast way to fabricate these detec-tors that is realized using a side wall ion-implantation and non-planar lithography. The first results of the prototypes are presented. The TWI-technology has been developed for the large imaging matrices. The special application in the view is the computed tomography in the field of medical imaging. The TWI-technology has also been adopted for the industrial applications.

    AB - VTT is a nonprofit research organization employing about 2700 persons. It is the largest R&D institution in Northern Europe and is part of the Finnish innovation system. VTT has a two decades experience, since 1989, on manufacturing and designing silicon radiation detector structures. The activities cover a range of industrial devices as well as the devices for the physics experiments. VTT is one of the forerun-ners for the 3D and edgeless detector technologies. Recently VTT has done processing development for the compound semiconductor materials, aspecially CdTe patterning and pixelization. An overview on the radiation detector activity at VTT is given and a Through-Wafer-Interconnect (TWI) technology is introduced. The state-of-the-art processing on 6” (150 mm) wafer relies on utiliza-tion of bonded support wafer in the final detector or during the fabrication of the detector, allowing fab-rication of very thin microstrip detectors, and trench etching through the wafer during the process of the 3D and edgeless detectors. The first thin detectors fabricated on Silicon-On-Insulator (SOI) wafers had a microstrip geometry and were designed for the Neutral Particle Analyser (NPA) setup for JET. This design overcomes the issues faced with the current a scintillator-photomultiplier combination that suffers from the background radiation and the particle identification is possible only for the energetic ions. The edgeless detector design offers some attractive properties for the high energy physics experiments and medical imaging studies. The processing is done on the bonded support wafer, which is removed at the end of the fabrication. We present here a new straight forward and fast way to fabricate these detec-tors that is realized using a side wall ion-implantation and non-planar lithography. The first results of the prototypes are presented. The TWI-technology has been developed for the large imaging matrices. The special application in the view is the computed tomography in the field of medical imaging. The TWI-technology has also been adopted for the industrial applications.

    KW - SOI

    KW - thin detector

    KW - ion-implantation

    KW - edgeless detector

    KW - CdTe detector

    KW - pixelization

    KW - Through-wafer-Interconnection

    M3 - Conference article

    ER -

    Kalliopuska J, Eränen S, Virolainen T, Vähänen S, Orava R, van Remortel N et al. Radiation Detector Activity at VTT. 2009. Paper presented at 43rd annual meeting of the Finnish Physical Society, Espoo, Finland.