Radiation detectors fabricated on high-purity GaAs epitaxial materials

Xiaopeng Wu; P. Kostamo; A. Gädda; S. Nenonen; Tommi Riekkinen; J. Härkönen; Jaakko Salonen; H. Andersson; Y. Zhilyaev; L. Fedorov; S. Eränen; M. Mattila; H. Lipsanen; Mika Prunnila; Juha Kalliopuska; Aarne Oja

doi:10.1088/1748-0221/9/12/C12024

Radiation detectors fabricated on high-purity GaAs epitaxial materials

Xiaopeng Wu (Corresponding Author), P. Kostamo, A. Gädda, S. Nenonen, Tommi Riekkinen, J. Härkönen, Jaakko Salonen, H. Andersson, Y. Zhilyaev, L. Fedorov, S. Eränen, M. Mattila, H. Lipsanen, Mika Prunnila, Juha Kalliopuska, Aarne Oja

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Abstract

Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

Original language	English
Article number	C12024
Number of pages	9
Journal	Journal of Instrumentation
Volume	9
DOIs	https://doi.org/10.1088/1748-0221/9/12/C12024
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed
Event	16th International Workshop on Radiation Imaging Detectors, IWORID 2014 - Trieste, Italy Duration: 22 Jun 2014 → 26 Jun 2014

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Wu, X., Kostamo, P., Gädda, A., Nenonen, S., Riekkinen, T., Härkönen, J., Salonen, J., Andersson, H., Zhilyaev, Y., Fedorov, L., Eränen, S., Mattila, M., Lipsanen, H., Prunnila, M., Kalliopuska, J., & Oja, A. (2014). Radiation detectors fabricated on high-purity GaAs epitaxial materials. Journal of Instrumentation, 9, Article C12024. https://doi.org/10.1088/1748-0221/9/12/C12024

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title = "Radiation detectors fabricated on high-purity GaAs epitaxial materials",

abstract = "Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.",

author = "Xiaopeng Wu and P. Kostamo and A. G{\"a}dda and S. Nenonen and Tommi Riekkinen and J. H{\"a}rk{\"o}nen and Jaakko Salonen and H. Andersson and Y. Zhilyaev and L. Fedorov and S. Er{\"a}nen and M. Mattila and H. Lipsanen and Mika Prunnila and Juha Kalliopuska and Aarne Oja",

year = "2014",

doi = "10.1088/1748-0221/9/12/C12024",

language = "English",

volume = "9",

journal = "Journal of Instrumentation",

issn = "1748-0221",

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note = "16th International Workshop on Radiation Imaging Detectors, IWORID 2014, IWORID 2014 ; Conference date: 22-06-2014 Through 26-06-2014",

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TY - JOUR

T1 - Radiation detectors fabricated on high-purity GaAs epitaxial materials

AU - Wu, Xiaopeng

AU - Kostamo, P.

AU - Gädda, A.

AU - Nenonen, S.

AU - Riekkinen, Tommi

AU - Härkönen, J.

AU - Salonen, Jaakko

AU - Andersson, H.

AU - Zhilyaev, Y.

AU - Fedorov, L.

AU - Eränen, S.

AU - Mattila, M.

AU - Lipsanen, H.

AU - Prunnila, Mika

AU - Kalliopuska, Juha

AU - Oja, Aarne

PY - 2014

Y1 - 2014

N2 - Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

AB - Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

U2 - 10.1088/1748-0221/9/12/C12024

DO - 10.1088/1748-0221/9/12/C12024

M3 - Article

SN - 1748-0221

VL - 9

JO - Journal of Instrumentation

JF - Journal of Instrumentation

M1 - C12024

T2 - 16th International Workshop on Radiation Imaging Detectors, IWORID 2014

Y2 - 22 June 2014 through 26 June 2014

ER -

Radiation detectors fabricated on high-purity GaAs epitaxial materials

Abstract

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