Radiation detectors fabricated on high-purity GaAs epitaxial materials

Xiaopeng Wu (Corresponding Author), P. Kostamo, Thomas Gädda, S. Nenonen, Tommi Riekkinen, J. Härkönen, Jaakko Salonen, H. Andersson, Y. Zhilyaev, L. Fedorov, S. Eränen, M. Mattila, H. Lipsanen, Mika Prunnila, Juha Kalliopuska, Aarne Oja

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.
Original languageEnglish
Article numberC12024
Number of pages9
JournalJournal of Instrumentation
Volume9
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed
Event16th International Workshop on Radiation Imaging Detectors, IWORID 2014 - Trieste, Italy
Duration: 22 Jun 201426 Jun 2014

Fingerprint

Radiation Detectors
Radiation detectors
radiation detectors
Gallium Arsenide
purity
Detector
Detectors
detectors
X ray radiography
Radiography
Leakage Current
Sputtering
X-ray Spectroscopy
Defect density
mesas
radiography
Etching
X ray spectroscopy
Metallizing
Trapping

Cite this

Wu, X., Kostamo, P., Gädda, T., Nenonen, S., Riekkinen, T., Härkönen, J., ... Oja, A. (2014). Radiation detectors fabricated on high-purity GaAs epitaxial materials. Journal of Instrumentation, 9, [C12024]. https://doi.org/10.1088/1748-0221/9/12/C12024
Wu, Xiaopeng ; Kostamo, P. ; Gädda, Thomas ; Nenonen, S. ; Riekkinen, Tommi ; Härkönen, J. ; Salonen, Jaakko ; Andersson, H. ; Zhilyaev, Y. ; Fedorov, L. ; Eränen, S. ; Mattila, M. ; Lipsanen, H. ; Prunnila, Mika ; Kalliopuska, Juha ; Oja, Aarne. / Radiation detectors fabricated on high-purity GaAs epitaxial materials. In: Journal of Instrumentation. 2014 ; Vol. 9.
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title = "Radiation detectors fabricated on high-purity GaAs epitaxial materials",
abstract = "Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.",
author = "Xiaopeng Wu and P. Kostamo and Thomas G{\"a}dda and S. Nenonen and Tommi Riekkinen and J. H{\"a}rk{\"o}nen and Jaakko Salonen and H. Andersson and Y. Zhilyaev and L. Fedorov and S. Er{\"a}nen and M. Mattila and H. Lipsanen and Mika Prunnila and Juha Kalliopuska and Aarne Oja",
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Wu, X, Kostamo, P, Gädda, T, Nenonen, S, Riekkinen, T, Härkönen, J, Salonen, J, Andersson, H, Zhilyaev, Y, Fedorov, L, Eränen, S, Mattila, M, Lipsanen, H, Prunnila, M, Kalliopuska, J & Oja, A 2014, 'Radiation detectors fabricated on high-purity GaAs epitaxial materials', Journal of Instrumentation, vol. 9, C12024. https://doi.org/10.1088/1748-0221/9/12/C12024

Radiation detectors fabricated on high-purity GaAs epitaxial materials. / Wu, Xiaopeng (Corresponding Author); Kostamo, P.; Gädda, Thomas; Nenonen, S.; Riekkinen, Tommi; Härkönen, J.; Salonen, Jaakko; Andersson, H.; Zhilyaev, Y.; Fedorov, L.; Eränen, S.; Mattila, M.; Lipsanen, H.; Prunnila, Mika; Kalliopuska, Juha; Oja, Aarne.

In: Journal of Instrumentation, Vol. 9, C12024, 2014.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Radiation detectors fabricated on high-purity GaAs epitaxial materials

AU - Wu, Xiaopeng

AU - Kostamo, P.

AU - Gädda, Thomas

AU - Nenonen, S.

AU - Riekkinen, Tommi

AU - Härkönen, J.

AU - Salonen, Jaakko

AU - Andersson, H.

AU - Zhilyaev, Y.

AU - Fedorov, L.

AU - Eränen, S.

AU - Mattila, M.

AU - Lipsanen, H.

AU - Prunnila, Mika

AU - Kalliopuska, Juha

AU - Oja, Aarne

PY - 2014

Y1 - 2014

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AB - Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

U2 - 10.1088/1748-0221/9/12/C12024

DO - 10.1088/1748-0221/9/12/C12024

M3 - Article

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