Radiation detectors fabricated on high-purity GaAs epitaxial materials

Xiaopeng Wu (Corresponding Author), P. Kostamo, A. Gädda, S. Nenonen, Tommi Riekkinen, J. Härkönen, Jaakko Salonen, H. Andersson, Y. Zhilyaev, L. Fedorov, S. Eränen, M. Mattila, H. Lipsanen, Mika Prunnila, Juha Kalliopuska, Aarne Oja

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)


    Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.
    Original languageEnglish
    Article numberC12024
    Number of pages9
    JournalJournal of Instrumentation
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed
    Event16th International Workshop on Radiation Imaging Detectors, IWORID 2014 - Trieste, Italy
    Duration: 22 Jun 201426 Jun 2014


    Dive into the research topics of 'Radiation detectors fabricated on high-purity GaAs epitaxial materials'. Together they form a unique fingerprint.

    Cite this