Radiation detectors fabricated on high-purity GaAs epitaxial materials

Xiaopeng Wu (Corresponding Author), P. Kostamo, Thomas Gädda, S. Nenonen, Tommi Riekkinen, J. Härkönen, Jaakko Salonen, H. Andersson, Y. Zhilyaev, L. Fedorov, S. Eränen, M. Mattila, H. Lipsanen, Mika Prunnila, Juha Kalliopuska, Aarne Oja

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.
    Original languageEnglish
    Article numberC12024
    Number of pages9
    JournalJournal of Instrumentation
    Volume9
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed
    Event16th International Workshop on Radiation Imaging Detectors, IWORID 2014 - Trieste, Italy
    Duration: 22 Jun 201426 Jun 2014

    Fingerprint

    Radiation Detectors
    Radiation detectors
    radiation detectors
    Gallium Arsenide
    purity
    Detector
    Detectors
    detectors
    X ray radiography
    Radiography
    Leakage Current
    Sputtering
    X-ray Spectroscopy
    Defect density
    mesas
    radiography
    Etching
    X ray spectroscopy
    Metallizing
    Trapping

    Cite this

    Wu, X., Kostamo, P., Gädda, T., Nenonen, S., Riekkinen, T., Härkönen, J., ... Oja, A. (2014). Radiation detectors fabricated on high-purity GaAs epitaxial materials. Journal of Instrumentation, 9, [C12024]. https://doi.org/10.1088/1748-0221/9/12/C12024
    Wu, Xiaopeng ; Kostamo, P. ; Gädda, Thomas ; Nenonen, S. ; Riekkinen, Tommi ; Härkönen, J. ; Salonen, Jaakko ; Andersson, H. ; Zhilyaev, Y. ; Fedorov, L. ; Eränen, S. ; Mattila, M. ; Lipsanen, H. ; Prunnila, Mika ; Kalliopuska, Juha ; Oja, Aarne. / Radiation detectors fabricated on high-purity GaAs epitaxial materials. In: Journal of Instrumentation. 2014 ; Vol. 9.
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    title = "Radiation detectors fabricated on high-purity GaAs epitaxial materials",
    abstract = "Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.",
    author = "Xiaopeng Wu and P. Kostamo and Thomas G{\"a}dda and S. Nenonen and Tommi Riekkinen and J. H{\"a}rk{\"o}nen and Jaakko Salonen and H. Andersson and Y. Zhilyaev and L. Fedorov and S. Er{\"a}nen and M. Mattila and H. Lipsanen and Mika Prunnila and Juha Kalliopuska and Aarne Oja",
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    language = "English",
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    Wu, X, Kostamo, P, Gädda, T, Nenonen, S, Riekkinen, T, Härkönen, J, Salonen, J, Andersson, H, Zhilyaev, Y, Fedorov, L, Eränen, S, Mattila, M, Lipsanen, H, Prunnila, M, Kalliopuska, J & Oja, A 2014, 'Radiation detectors fabricated on high-purity GaAs epitaxial materials', Journal of Instrumentation, vol. 9, C12024. https://doi.org/10.1088/1748-0221/9/12/C12024

    Radiation detectors fabricated on high-purity GaAs epitaxial materials. / Wu, Xiaopeng (Corresponding Author); Kostamo, P.; Gädda, Thomas; Nenonen, S.; Riekkinen, Tommi; Härkönen, J.; Salonen, Jaakko; Andersson, H.; Zhilyaev, Y.; Fedorov, L.; Eränen, S.; Mattila, M.; Lipsanen, H.; Prunnila, Mika; Kalliopuska, Juha; Oja, Aarne.

    In: Journal of Instrumentation, Vol. 9, C12024, 2014.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Radiation detectors fabricated on high-purity GaAs epitaxial materials

    AU - Wu, Xiaopeng

    AU - Kostamo, P.

    AU - Gädda, Thomas

    AU - Nenonen, S.

    AU - Riekkinen, Tommi

    AU - Härkönen, J.

    AU - Salonen, Jaakko

    AU - Andersson, H.

    AU - Zhilyaev, Y.

    AU - Fedorov, L.

    AU - Eränen, S.

    AU - Mattila, M.

    AU - Lipsanen, H.

    AU - Prunnila, Mika

    AU - Kalliopuska, Juha

    AU - Oja, Aarne

    PY - 2014

    Y1 - 2014

    N2 - Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

    AB - Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

    U2 - 10.1088/1748-0221/9/12/C12024

    DO - 10.1088/1748-0221/9/12/C12024

    M3 - Article

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