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Radiation detectors fabricated on high-purity GaAs epitaxial materials
Xiaopeng Wu
*
, P. Kostamo
, A. Gädda
, S. Nenonen
, Tommi Riekkinen
, J. Härkönen
, Jaakko Salonen
, H. Andersson
, Y. Zhilyaev
, L. Fedorov
, S. Eränen
, M. Mattila
, H. Lipsanen
,
Mika Prunnila
, Juha Kalliopuska
, Aarne Oja
*
Corresponding author for this work
VTT (former employee or external)
Oxford Instruments Analytical Oy
University of Helsinki
Ioffe Institute
Aalto University
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peer-review
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Keyphrases
High Purity
100%
Gallium Arsenide
100%
Epitaxial
100%
Radiation Detectors
100%
Pad Detectors
66%
Leakage Current
33%
Metallization
33%
X-ray Spectroscopy
33%
Transient Current
33%
Medipix
33%
Mesa Etching
33%
Reverse Bias
33%
Trapping Time
33%
Low Defect Density
33%
GaAs Detectors
33%
GaAs Material
33%
Efficiency Defect
33%
X-ray Radiography
33%
Pixel Radiation Detector
33%
High Absorption Rate
33%
INIS
purity
100%
gallium arsenides
100%
epitaxy
100%
radiation detectors
100%
efficiency
25%
density
25%
applications
25%
electrons
25%
sputtering
25%
fabrication
25%
defects
25%
absorption
25%
trapping
25%
x-ray spectroscopy
25%
etching
25%
leakage current
25%
x-ray radiography
25%
Physics
Radiation Detector
100%
X Ray Spectroscopy
50%
Metallizing
50%
Material Science
Gallium Arsenide
100%
Defect Density
25%
Radiographic Testing
25%
X-Ray Spectroscopy
25%