Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

J. Härkönen; E. Tuovinen; P. Luukka; E. Tuominen; K. Lassila-Perini; P. Mehtälä; S. Nummela; J. Nysten; A. Zibellini; Z. Li; E. Fretwurst; G. Lindstroem; J. Stahl; F. Hönniger; V. Eremin; A. Ivanov; E. Verbitskaya; P. Heikkilä; V. Ovchinnikov; M. Yli-Koski; P. Laitinen; A. Pirojenko; I. Riihimäki; A. Virtanen

doi:10.1016/j.nima.2003.11.018

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

J. Härkönen (Corresponding Author), E. Tuovinen, P. Luukka, E. Tuominen, K. Lassila-Perini, P. Mehtälä, S. Nummela, J. Nysten, A. Zibellini, Z. Li, E. Fretwurst, G. Lindstroem, J. Stahl, F. Hönniger, V. Eremin, A. Ivanov, E. Verbitskaya, P. Heikkilä, V. Ovchinnikov, M. Yli-KoskiP. Laitinen, A. Pirojenko, I. Riihimäki, A. Virtanen

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

22 Citations (Scopus)

Abstract

We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.

Original language	English
Pages (from-to)	346-348
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	518
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2003.11.018
Publication status	Published - 1 Feb 2004
MoE publication type	A1 Journal article-refereed
Event	Frontier Detectors for Frontier Physics, Proceedings - La Biodola, Italy Duration: 25 May 2003 → 31 May 2003

Keywords

Cz-Si
Detector
Radiation hardness

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10.1016/j.nima.2003.11.018

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Härkönen, J., Tuovinen, E., Luukka, P., Tuominen, E., Lassila-Perini, K., Mehtälä, P., Nummela, S., Nysten, J., Zibellini, A., Li, Z., Fretwurst, E., Lindstroem, G., Stahl, J., Hönniger, F., Eremin, V., Ivanov, A., Verbitskaya, E., Heikkilä, P., Ovchinnikov, V., ... Virtanen, A. (2004). Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 518(1-2), 346-348. https://doi.org/10.1016/j.nima.2003.11.018

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title = "Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons",

abstract = "We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.",

keywords = "Cz-Si, Detector, Radiation hardness",

author = "J. H{\"a}rk{\"o}nen and E. Tuovinen and P. Luukka and E. Tuominen and K. Lassila-Perini and P. Meht{\"a}l{\"a} and S. Nummela and J. Nysten and A. Zibellini and Z. Li and E. Fretwurst and G. Lindstroem and J. Stahl and F. H{\"o}nniger and V. Eremin and A. Ivanov and E. Verbitskaya and P. Heikkil{\"a} and V. Ovchinnikov and M. Yli-Koski and P. Laitinen and A. Pirojenko and I. Riihim{\"a}ki and A. Virtanen",

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doi = "10.1016/j.nima.2003.11.018",

language = "English",

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journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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note = "Frontier Detectors for Frontier Physics, Proceedings ; Conference date: 25-05-2003 Through 31-05-2003",

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Härkönen, J, Tuovinen, E, Luukka, P, Tuominen, E, Lassila-Perini, K, Mehtälä, P, Nummela, S, Nysten, J, Zibellini, A, Li, Z, Fretwurst, E, Lindstroem, G, Stahl, J, Hönniger, F, Eremin, V, Ivanov, A, Verbitskaya, E, Heikkilä, P, Ovchinnikov, V, Yli-Koski, M, Laitinen, P, Pirojenko, A, Riihimäki, I & Virtanen, A 2004, 'Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 518, no. 1-2, pp. 346-348. https://doi.org/10.1016/j.nima.2003.11.018

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons. / Härkönen, J. (Corresponding Author); Tuovinen, E.; Luukka, P. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 518, No. 1-2, 01.02.2004, p. 346-348.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

AU - Härkönen, J.

AU - Tuovinen, E.

AU - Luukka, P.

AU - Tuominen, E.

AU - Lassila-Perini, K.

AU - Mehtälä, P.

AU - Nummela, S.

AU - Nysten, J.

AU - Zibellini, A.

AU - Li, Z.

AU - Fretwurst, E.

AU - Lindstroem, G.

AU - Stahl, J.

AU - Hönniger, F.

AU - Eremin, V.

AU - Ivanov, A.

AU - Verbitskaya, E.

AU - Heikkilä, P.

AU - Ovchinnikov, V.

AU - Yli-Koski, M.

AU - Laitinen, P.

AU - Pirojenko, A.

AU - Riihimäki, I.

AU - Virtanen, A.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.

AB - We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.

KW - Cz-Si

KW - Detector

KW - Radiation hardness

UR - http://www.scopus.com/inward/record.url?scp=0942299037&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2003.11.018

DO - 10.1016/j.nima.2003.11.018

M3 - Article

SN - 0168-9002

VL - 518

SP - 346

EP - 348

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-2

T2 - Frontier Detectors for Frontier Physics, Proceedings

Y2 - 25 May 2003 through 31 May 2003

ER -

Härkönen J, Tuovinen E, Luukka P, Tuominen E, Lassila-Perini K, Mehtälä P et al. Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2004 Feb 1;518(1-2):346-348. doi: 10.1016/j.nima.2003.11.018

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

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Keywords

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