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Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

  • J. Härkönen*
  • , E. Tuovinen
  • , P. Luukka
  • , Eija Tuominen
  • , K. Lassila-Perini
  • , P. Mehtälä
  • , S. Nummela
  • , J. Nysten
  • , A. Zibellini
  • , Z. Li
  • , E. Fretwurst
  • , G. Lindstroem
  • , J. Stahl
  • , F. Hönniger
  • , V. Eremin
  • , A. Ivanov
  • , E. Verbitskaya
  • , P. Heikkilä
  • , V. Ovchinnikov
  • , M. Yli-Koski
    • P. Laitinen, A. Pirojenko, I. Riihimäki, A. Virtanen
*Corresponding author for this work
  • Helsinki Institute of Physics (HIP)
  • Brookhaven National Laboratory
  • Hamburg University of Technology
  • Ioffe Institute
  • Helsinki University of Technology
  • University of Jyväskylä

Research output: Contribution to journal › Article › Scientific › peer-review

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