Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

Eija Tuominen; J. Härkönen; E. Tuovinen; K. Lassila-Perini; P Luukka; P. Mehtälä; S. Nummela; J. Nysten; A. Zibellini; Z. Li; P. Heikkilä; Victor Ovchinnikov; M. Yli-Koski; P. Laitinen; A. Pirojenko; I. Riihimäki; A. Virtanen

doi:10.1109/TNS.2003.821405

Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

Eija Tuominen, J. Härkönen, E. Tuovinen, K. Lassila-Perini, P Luukka, P. Mehtälä, S. Nummela, J. Nysten, A. Zibellini, Z. Li, P. Heikkilä, Victor Ovchinnikov, M. Yli-Koski, P. Laitinen, A. Pirojenko, I. Riihimäki, A. Virtanen

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Helsinki Institute of Physics (HIP)

Research output: Contribution to journal › Article › Scientific › peer-review

13 Citations (Scopus)

Abstract

We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.

Original language	English
Pages (from-to)	1942-1946
Journal	IEEE Transactions on Nuclear Science
Volume	50
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2003.821405
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

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Tuominen, E., Härkönen, J., Tuovinen, E., Lassila-Perini, K., Luukka, P., Mehtälä, P., Nummela, S., Nysten, J., Zibellini, A., Li, Z., Heikkilä, P., Ovchinnikov, V., Yli-Koski, M., Laitinen, P., Pirojenko, A., Riihimäki, I., & Virtanen, A. (2003). Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons. IEEE Transactions on Nuclear Science, 50(6), 1942-1946. https://doi.org/10.1109/TNS.2003.821405

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title = "Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons",

abstract = "We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.",

author = "Eija Tuominen and J. H{\"a}rk{\"o}nen and E. Tuovinen and K. Lassila-Perini and P Luukka and P. Meht{\"a}l{\"a} and S. Nummela and J. Nysten and A. Zibellini and Z. Li and P. Heikkil{\"a} and Victor Ovchinnikov and M. Yli-Koski and P. Laitinen and A. Pirojenko and I. Riihim{\"a}ki and A. Virtanen",

year = "2003",

doi = "10.1109/TNS.2003.821405",

language = "English",

volume = "50",

pages = "1942--1946",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

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Tuominen, E, Härkönen, J, Tuovinen, E, Lassila-Perini, K, Luukka, P, Mehtälä, P, Nummela, S, Nysten, J, Zibellini, A, Li, Z, Heikkilä, P, Ovchinnikov, V, Yli-Koski, M, Laitinen, P, Pirojenko, A, Riihimäki, I & Virtanen, A 2003, 'Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons', IEEE Transactions on Nuclear Science, vol. 50, no. 6, pp. 1942-1946. https://doi.org/10.1109/TNS.2003.821405

TY - JOUR

T1 - Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

AU - Tuominen, Eija

AU - Härkönen, J.

AU - Tuovinen, E.

AU - Lassila-Perini, K.

AU - Luukka, P

AU - Mehtälä, P.

AU - Nummela, S.

AU - Nysten, J.

AU - Zibellini, A.

AU - Li, Z.

AU - Heikkilä, P.

AU - Ovchinnikov, Victor

AU - Yli-Koski, M.

AU - Laitinen, P.

AU - Pirojenko, A.

AU - Riihimäki, I.

AU - Virtanen, A.

PY - 2003

Y1 - 2003

N2 - We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.

AB - We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.

U2 - 10.1109/TNS.2003.821405

DO - 10.1109/TNS.2003.821405

M3 - Article

SN - 0018-9499

VL - 50

SP - 1942

EP - 1946

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

Abstract

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