Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality

Karsten Arts, Mikko Utriainen, Riikka L. Puurunen, Wilhelmus M.M. Kessels, Harm C.M. Knoops

    Research output: Contribution to conferenceConference AbstractScientificpeer-review

    Original languageEnglish
    Pages105-106
    Number of pages1
    Publication statusPublished - 23 Jul 2019
    MoE publication typeNot Eligible
    Event19th International Conference on Atomic Layer Deposition, ALD 2019 - Bellevue, Washington, United States
    Duration: 21 Jul 201924 Jul 2019
    https://ald2019.avs.org/

    Conference

    Conference19th International Conference on Atomic Layer Deposition, ALD 2019
    Abbreviated titleALD2019
    CountryUnited States
    CityWashington
    Period21/07/1924/07/19
    Internet address

    Cite this

    Arts, K., Utriainen, M., Puurunen, R. L., Kessels, W. M. M., & Knoops, H. C. M. (2019). Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality. 105-106. Abstract from 19th International Conference on Atomic Layer Deposition, ALD 2019, Washington, United States.
    Arts, Karsten ; Utriainen, Mikko ; Puurunen, Riikka L. ; Kessels, Wilhelmus M.M. ; Knoops, Harm C.M. / Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality. Abstract from 19th International Conference on Atomic Layer Deposition, ALD 2019, Washington, United States.1 p.
    @conference{c8f4987156f245979466b72270f5d765,
    title = "Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality",
    author = "Karsten Arts and Mikko Utriainen and Puurunen, {Riikka L.} and Kessels, {Wilhelmus M.M.} and Knoops, {Harm C.M.}",
    year = "2019",
    month = "7",
    day = "23",
    language = "English",
    pages = "105--106",
    note = "19th International Conference on Atomic Layer Deposition, ALD 2019, ALD2019 ; Conference date: 21-07-2019 Through 24-07-2019",
    url = "https://ald2019.avs.org/",

    }

    Arts, K, Utriainen, M, Puurunen, RL, Kessels, WMM & Knoops, HCM 2019, 'Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality', 19th International Conference on Atomic Layer Deposition, ALD 2019, Washington, United States, 21/07/19 - 24/07/19 pp. 105-106.

    Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality. / Arts, Karsten; Utriainen, Mikko; Puurunen, Riikka L.; Kessels, Wilhelmus M.M.; Knoops, Harm C.M.

    2019. 105-106 Abstract from 19th International Conference on Atomic Layer Deposition, ALD 2019, Washington, United States.

    Research output: Contribution to conferenceConference AbstractScientificpeer-review

    TY - CONF

    T1 - Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality

    AU - Arts, Karsten

    AU - Utriainen, Mikko

    AU - Puurunen, Riikka L.

    AU - Kessels, Wilhelmus M.M.

    AU - Knoops, Harm C.M.

    PY - 2019/7/23

    Y1 - 2019/7/23

    UR - https://cdn.fs.pathlms.com/tciLC7LAQ9Kwtbcp2QyS

    M3 - Conference Abstract

    SP - 105

    EP - 106

    ER -

    Arts K, Utriainen M, Puurunen RL, Kessels WMM, Knoops HCM. Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality. 2019. Abstract from 19th International Conference on Atomic Layer Deposition, ALD 2019, Washington, United States.