Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality

Karsten Arts, Mikko Utriainen, Riikka L. Puurunen, Wilhelmus M.M. Kessels, Harm C.M. Knoops

    Research output: Contribution to conferenceConference AbstractScientificpeer-review

    Original languageEnglish
    Pages105-106
    Number of pages1
    Publication statusPublished - 23 Jul 2019
    MoE publication typeNot Eligible
    Event19th International Conference on Atomic Layer Deposition, ALD 2019 - Bellevue, Washington, United States
    Duration: 21 Jul 201924 Jul 2019
    https://ald2019.avs.org/

    Conference

    Conference19th International Conference on Atomic Layer Deposition, ALD 2019
    Abbreviated titleALD2019
    CountryUnited States
    CityWashington
    Period21/07/1924/07/19
    Internet address

    Keywords

    • OtaNano

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