Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality

Karsten Arts, Mikko Utriainen, Riikka L. Puurunen, Wilhelmus M.M. Kessels, Harm C.M. Knoops

Research output: Contribution to conferenceConference AbstractScientificpeer-review

Original languageEnglish
Pages105-106
Number of pages1
Publication statusPublished - 23 Jul 2019
MoE publication typeNot Eligible
Event19th International Conference on Atomic Layer Deposition, ALD 2019 - Bellevue, Washington, United States
Duration: 21 Jul 201924 Jul 2019
https://ald2019.avs.org/

Conference

Conference19th International Conference on Atomic Layer Deposition, ALD 2019
Abbreviated titleALD2019
CountryUnited States
CityWashington
Period21/07/1924/07/19
Internet address

Keywords

  • OtaNano

Cite this