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Radical Surface Recombination Probabilities during Plasma ALD of SiO2, TiO2 and Al2O3 Determined from Film Conformality

  • Karsten Arts
  • , Mikko Utriainen
  • , Riikka L. Puurunen
  • , Wilhelmus M.M. Kessels
  • , Harm C.M. Knoops
    • Eindhoven University of Technology (TU/e)
    • Aalto University
    • Oxford Instruments Plasma Technology

    Research output: Contribution to conference › Conference Abstract › Scientific › peer-review

    Original languageEnglish
    Pages105-106
    Number of pages1
    Publication statusPublished - 23 Jul 2019
    MoE publication typeNot Eligible
    Event19th International Conference on Atomic Layer Deposition, ALD 2019 - Bellevue, Washington, United States
    Duration: 21 Jul 2019 → 24 Jul 2019
    https://ald2019.avs.org/

    Conference

    Conference19th International Conference on Atomic Layer Deposition, ALD 2019
    Abbreviated titleALD2019
    Country/TerritoryUnited States
    CityWashington
    Period21/07/19 → 24/07/19
    Internet address

    Keywords

    • OtaNano

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