Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

J. Leppäniemi (Corresponding Author), K. Ojanperä, T. Kololuoma, O.-H. Huttunen, J. Dahl, M. Tuominen, P. Laukkanen, H. Majumdar, A. Alastalo

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Abstract

We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In2O3) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm2/(V·s). Amorphous In2O3 films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm2/(V·s) and 7.5 cm2/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.
Original languageEnglish
Article number113514
JournalApplied Physics Letters
Volume105
Issue number11
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

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metal oxides
transistors
indium oxides
annealing
thin films
condensation
metals
saturation
oxides
hydroxyl radicals
metal oxide semiconductors
zinc oxides
x ray spectroscopy
nitrates
hysteresis
photoelectron spectroscopy
fabrication
irradiation
temperature
augmentation

Keywords

  • solution processes
  • condensation
  • thin film transistors
  • carrier mobility
  • ozone

Cite this

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title = "Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing",
abstract = "We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In2O3) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm2/(V·s). Amorphous In2O3 films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm2/(V·s) and 7.5 cm2/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.",
keywords = "solution processes, condensation, thin film transistors, carrier mobility, ozone",
author = "J. Lepp{\"a}niemi and K. Ojanper{\"a} and T. Kololuoma and O.-H. Huttunen and J. Dahl and M. Tuominen and P. Laukkanen and H. Majumdar and A. Alastalo",
year = "2014",
doi = "10.1063/1.4895830",
language = "English",
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journal = "Applied Physics Letters",
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TY - JOUR

T1 - Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

AU - Leppäniemi, J.

AU - Ojanperä, K.

AU - Kololuoma, T.

AU - Huttunen, O.-H.

AU - Dahl, J.

AU - Tuominen, M.

AU - Laukkanen, P.

AU - Majumdar, H.

AU - Alastalo, A.

PY - 2014

Y1 - 2014

N2 - We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In2O3) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm2/(V·s). Amorphous In2O3 films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm2/(V·s) and 7.5 cm2/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

AB - We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In2O3) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm2/(V·s). Amorphous In2O3 films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm2/(V·s) and 7.5 cm2/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

KW - solution processes

KW - condensation

KW - thin film transistors

KW - carrier mobility

KW - ozone

U2 - 10.1063/1.4895830

DO - 10.1063/1.4895830

M3 - Article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 113514

ER -