Rapid thermal annealing of Al-Si contacts

C. Pai, Silvanus Cabreros, Silvanus Lau, T. Seidel, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×107 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.
Original languageEnglish
Pages (from-to)652 - 654
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number7
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

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Pai, C., Cabreros, S., Lau, S., Seidel, T., & Suni, I. (1985). Rapid thermal annealing of Al-Si contacts. Applied Physics Letters, 46(7), 652 - 654. https://doi.org/10.1063/1.95517
Pai, C. ; Cabreros, Silvanus ; Lau, Silvanus ; Seidel, T. ; Suni, Ilkka. / Rapid thermal annealing of Al-Si contacts. In: Applied Physics Letters. 1985 ; Vol. 46, No. 7. pp. 652 - 654.
@article{1021d06320fa4aa9b532ee7065aee8fc,
title = "Rapid thermal annealing of Al-Si contacts",
abstract = "Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.",
author = "C. Pai and Silvanus Cabreros and Silvanus Lau and T. Seidel and Ilkka Suni",
year = "1985",
doi = "10.1063/1.95517",
language = "English",
volume = "46",
pages = "652 -- 654",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",

}

Pai, C, Cabreros, S, Lau, S, Seidel, T & Suni, I 1985, 'Rapid thermal annealing of Al-Si contacts', Applied Physics Letters, vol. 46, no. 7, pp. 652 - 654. https://doi.org/10.1063/1.95517

Rapid thermal annealing of Al-Si contacts. / Pai, C.; Cabreros, Silvanus; Lau, Silvanus; Seidel, T.; Suni, Ilkka.

In: Applied Physics Letters, Vol. 46, No. 7, 1985, p. 652 - 654.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Rapid thermal annealing of Al-Si contacts

AU - Pai, C.

AU - Cabreros, Silvanus

AU - Lau, Silvanus

AU - Seidel, T.

AU - Suni, Ilkka

PY - 1985

Y1 - 1985

N2 - Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.

AB - Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.

U2 - 10.1063/1.95517

DO - 10.1063/1.95517

M3 - Article

VL - 46

SP - 652

EP - 654

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Pai C, Cabreros S, Lau S, Seidel T, Suni I. Rapid thermal annealing of Al-Si contacts. Applied Physics Letters. 1985;46(7):652 - 654. https://doi.org/10.1063/1.95517