Rapid thermal annealing of Al-Si contacts

C.S. Pai; E. Cabreros; Silvanus Lau; T.E. Seidel; Ilkka Suni

doi:10.1063/1.95517

Rapid thermal annealing of Al-Si contacts

C.S. Pai, E. Cabreros, Silvanus Lau, T.E. Seidel, Ilkka Suni

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

18 Citations (Scopus)

Abstract

Contact formation of Al on n⁺‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10⁻⁷ Ω cm² can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.

Original language	English
Pages (from-to)	652-654
Journal	Applied Physics Letters
Volume	46
Issue number	7
DOIs	https://doi.org/10.1063/1.95517
Publication status	Published - 1985
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.95517

Cite this

@article{1021d06320fa4aa9b532ee7065aee8fc,

title = "Rapid thermal annealing of Al-Si contacts",

abstract = "Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.",

author = "C.S. Pai and E. Cabreros and Silvanus Lau and T.E. Seidel and Ilkka Suni",

year = "1985",

doi = "10.1063/1.95517",

language = "English",

volume = "46",

pages = "652--654",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "7",

}

TY - JOUR

T1 - Rapid thermal annealing of Al-Si contacts

AU - Pai, C.S.

AU - Cabreros, E.

AU - Lau, Silvanus

AU - Seidel, T.E.

AU - Suni, Ilkka

PY - 1985

Y1 - 1985

N2 - Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.

AB - Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.

U2 - 10.1063/1.95517

DO - 10.1063/1.95517

M3 - Article

SN - 0003-6951

VL - 46

SP - 652

EP - 654

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Rapid thermal annealing of Al-Si contacts

Abstract

Access to Document

Fingerprint

Cite this