Rapid thermal annealing of Al-Si contacts

C.S. Pai, E. Cabreros, Silvanus Lau, T.E. Seidel, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)


Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×107 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.
Original languageEnglish
Pages (from-to)652-654
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 1985
MoE publication typeA1 Journal article-refereed


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