Rapid thermal annealing of Cu/WNx/Si structures

Antti Lipsanen (Corresponding Author), Pekka Kuivalainen, E. Rauhala, A. Seppälä, S. Franssila

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The thermal stability of Cu/WN x /Si multilayer structures fabricated by using reactive d.c. magnetron sputtering was studied using rapid thermal annealing (RTA) and several analytic methods. The analytic methods included four-point resistance measurements, X-ray diffraction analysis, Rutherford backscattering spectrometry, and optical and scanning electron microscopy. The barrier performance of WN x -layers is compared to the performance of sputtered W layers. It is shown that a 15-nm thick tungsten nitride (WN x ) layer prevents the destructive reactions up to 700 °C for a 12-s RTA process in a nitrogen atmosphere.
Original languageEnglish
Pages (from-to)315-318
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number5-7
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Rapid thermal annealing
Tungsten
annealing
Reactive sputtering
Rutherford backscattering spectroscopy
Nitrides
Magnetron sputtering
X ray diffraction analysis
Spectrometry
Multilayers
Thermodynamic stability
Nitrogen
laminates
Scanning electron microscopy
nitrides
backscattering
magnetron sputtering
tungsten
thermal stability
nitrogen

Cite this

Lipsanen, A., Kuivalainen, P., Rauhala, E., Seppälä, A., & Franssila, S. (2003). Rapid thermal annealing of Cu/WNx/Si structures. Journal of Materials Science: Materials in Electronics, 14(5-7), 315-318. https://doi.org/10.1023/A:1023971827850
Lipsanen, Antti ; Kuivalainen, Pekka ; Rauhala, E. ; Seppälä, A. ; Franssila, S. / Rapid thermal annealing of Cu/WNx/Si structures. In: Journal of Materials Science: Materials in Electronics. 2003 ; Vol. 14, No. 5-7. pp. 315-318.
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abstract = "The thermal stability of Cu/WN x /Si multilayer structures fabricated by using reactive d.c. magnetron sputtering was studied using rapid thermal annealing (RTA) and several analytic methods. The analytic methods included four-point resistance measurements, X-ray diffraction analysis, Rutherford backscattering spectrometry, and optical and scanning electron microscopy. The barrier performance of WN x -layers is compared to the performance of sputtered W layers. It is shown that a 15-nm thick tungsten nitride (WN x ) layer prevents the destructive reactions up to 700 °C for a 12-s RTA process in a nitrogen atmosphere.",
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Lipsanen, A, Kuivalainen, P, Rauhala, E, Seppälä, A & Franssila, S 2003, 'Rapid thermal annealing of Cu/WNx/Si structures', Journal of Materials Science: Materials in Electronics, vol. 14, no. 5-7, pp. 315-318. https://doi.org/10.1023/A:1023971827850

Rapid thermal annealing of Cu/WNx/Si structures. / Lipsanen, Antti (Corresponding Author); Kuivalainen, Pekka; Rauhala, E.; Seppälä, A.; Franssila, S.

In: Journal of Materials Science: Materials in Electronics, Vol. 14, No. 5-7, 2003, p. 315-318.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Rauhala, E.

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AB - The thermal stability of Cu/WN x /Si multilayer structures fabricated by using reactive d.c. magnetron sputtering was studied using rapid thermal annealing (RTA) and several analytic methods. The analytic methods included four-point resistance measurements, X-ray diffraction analysis, Rutherford backscattering spectrometry, and optical and scanning electron microscopy. The barrier performance of WN x -layers is compared to the performance of sputtered W layers. It is shown that a 15-nm thick tungsten nitride (WN x ) layer prevents the destructive reactions up to 700 °C for a 12-s RTA process in a nitrogen atmosphere.

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DO - 10.1023/A:1023971827850

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EP - 318

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

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