Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation

Zheng Xia (Corresponding Author), Jaakko Saarilahti, Hannu Ronkainen, Simo Eränen, Ilkka Suni, Jyrki Molarius, Pekka Kuivalainen, Eero Ristolainen, T Tuomi

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

(100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.
Original languageEnglish
Pages (from-to)247-254
Number of pages8
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume88
Issue number3
DOIs
Publication statusPublished - 3 May 1994
MoE publication typeA1 Journal article-refereed

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Germanium
Rapid thermal annealing
Ion implantation
ion implantation
germanium
Rapid thermal processing
annealing
Secondary ion mass spectrometry
Computer program listings
Ions
Oxygen
secondary ion mass spectrometry
computer programs
dosage
oxygen
estimates
profiles
Temperature
ions
temperature

Cite this

Xia, Zheng ; Saarilahti, Jaakko ; Ronkainen, Hannu ; Eränen, Simo ; Suni, Ilkka ; Molarius, Jyrki ; Kuivalainen, Pekka ; Ristolainen, Eero ; Tuomi, T. / Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation. In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 1994 ; Vol. 88, No. 3. pp. 247-254.
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title = "Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation",
abstract = "(100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.",
author = "Zheng Xia and Jaakko Saarilahti and Hannu Ronkainen and Simo Er{\"a}nen and Ilkka Suni and Jyrki Molarius and Pekka Kuivalainen and Eero Ristolainen and T Tuomi",
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Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation. / Xia, Zheng (Corresponding Author); Saarilahti, Jaakko; Ronkainen, Hannu; Eränen, Simo; Suni, Ilkka; Molarius, Jyrki; Kuivalainen, Pekka; Ristolainen, Eero; Tuomi, T.

In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 88, No. 3, 03.05.1994, p. 247-254.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation

AU - Xia, Zheng

AU - Saarilahti, Jaakko

AU - Ronkainen, Hannu

AU - Eränen, Simo

AU - Suni, Ilkka

AU - Molarius, Jyrki

AU - Kuivalainen, Pekka

AU - Ristolainen, Eero

AU - Tuomi, T

PY - 1994/5/3

Y1 - 1994/5/3

N2 - (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.

AB - (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.

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JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

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