Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation

Zheng Xia; Jaakko Saarilahti; Hannu Ronkainen; Simo Eränen; Ilkka Suni; Jyrki Molarius; Pekka Kuivalainen; Eero Ristolainen; T Tuomi

doi:10.1016/0168-583X(94)95320-1

Rapid thermal annealing of SI_1-x GE_x layers formed by germanium ion implantation

Zheng Xia (Corresponding Author), Jaakko Saarilahti, Hannu Ronkainen, Simo Eränen, Ilkka Suni, Jyrki Molarius, Pekka Kuivalainen, Eero Ristolainen, T Tuomi

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

(100) Si samples, amorphized by implanting with 50, 70 and 100 keV ⁷⁴Ge⁺ ions at doses of the order of 1 × 10¹⁶cm⁻², have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by ¹⁶ O(α,α)¹⁶ RBS resonance channeling and SIMS.

Original language	English
Pages (from-to)	247-254
Number of pages	8
Journal	Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	88
Issue number	3
DOIs	https://doi.org/10.1016/0168-583X(94)95320-1
Publication status	Published - 3 May 1994
MoE publication type	A1 Journal article-refereed

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Xia, Z., Saarilahti, J., Ronkainen, H., Eränen, S., Suni, I., Molarius, J., Kuivalainen, P., Ristolainen, E., & Tuomi, T. (1994). Rapid thermal annealing of SI_1-x GE_x layers formed by germanium ion implantation. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 88(3), 247-254. https://doi.org/10.1016/0168-583X(94)95320-1

@article{221917090ac14d7ab0be0282497fc50e,

title = "Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation",

abstract = "(100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.",

author = "Zheng Xia and Jaakko Saarilahti and Hannu Ronkainen and Simo Er{\"a}nen and Ilkka Suni and Jyrki Molarius and Pekka Kuivalainen and Eero Ristolainen and T Tuomi",

year = "1994",

month = may,

day = "3",

doi = "10.1016/0168-583X(94)95320-1",

language = "English",

volume = "88",

pages = "247--254",

journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",

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number = "3",

}

Xia, Z, Saarilahti, J, Ronkainen, H, Eränen, S, Suni, I, Molarius, J, Kuivalainen, P, Ristolainen, E & Tuomi, T 1994, 'Rapid thermal annealing of SI_1-x GE_x layers formed by germanium ion implantation', Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, vol. 88, no. 3, pp. 247-254. https://doi.org/10.1016/0168-583X(94)95320-1

Rapid thermal annealing of SI_1-x GE_x layers formed by germanium ion implantation. / Xia, Zheng (Corresponding Author); Saarilahti, Jaakko; Ronkainen, Hannu et al.
In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 88, No. 3, 03.05.1994, p. 247-254.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation

AU - Xia, Zheng

AU - Saarilahti, Jaakko

AU - Ronkainen, Hannu

AU - Eränen, Simo

AU - Suni, Ilkka

AU - Molarius, Jyrki

AU - Kuivalainen, Pekka

AU - Ristolainen, Eero

AU - Tuomi, T

PY - 1994/5/3

Y1 - 1994/5/3

N2 - (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.

AB - (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.

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U2 - 10.1016/0168-583X(94)95320-1

DO - 10.1016/0168-583X(94)95320-1

M3 - Article

AN - SCOPUS:0038937311

SN - 0168-583X

VL - 88

SP - 247

EP - 254

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

IS - 3

ER -

Rapid thermal annealing of SI_1-x GE_x layers formed by germanium ion implantation

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