Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation

Zheng Xia (Corresponding Author), Jaakko Saarilahti, Hannu Ronkainen, Simo Eränen, Ilkka Suni, Jyrki Molarius, Pekka Kuivalainen, Eero Ristolainen, T Tuomi

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.
    Original languageEnglish
    Pages (from-to)247-254
    Number of pages8
    JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume88
    Issue number3
    DOIs
    Publication statusPublished - 3 May 1994
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Germanium
    Rapid thermal annealing
    Ion implantation
    ion implantation
    germanium
    Rapid thermal processing
    annealing
    Secondary ion mass spectrometry
    Computer program listings
    Ions
    Oxygen
    secondary ion mass spectrometry
    computer programs
    dosage
    oxygen
    estimates
    profiles
    Temperature
    ions
    temperature

    Cite this

    Xia, Zheng ; Saarilahti, Jaakko ; Ronkainen, Hannu ; Eränen, Simo ; Suni, Ilkka ; Molarius, Jyrki ; Kuivalainen, Pekka ; Ristolainen, Eero ; Tuomi, T. / Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation. In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 1994 ; Vol. 88, No. 3. pp. 247-254.
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    title = "Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation",
    abstract = "(100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.",
    author = "Zheng Xia and Jaakko Saarilahti and Hannu Ronkainen and Simo Er{\"a}nen and Ilkka Suni and Jyrki Molarius and Pekka Kuivalainen and Eero Ristolainen and T Tuomi",
    year = "1994",
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    Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation. / Xia, Zheng (Corresponding Author); Saarilahti, Jaakko; Ronkainen, Hannu; Eränen, Simo; Suni, Ilkka; Molarius, Jyrki; Kuivalainen, Pekka; Ristolainen, Eero; Tuomi, T.

    In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 88, No. 3, 03.05.1994, p. 247-254.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Rapid thermal annealing of SI1-x GEx layers formed by germanium ion implantation

    AU - Xia, Zheng

    AU - Saarilahti, Jaakko

    AU - Ronkainen, Hannu

    AU - Eränen, Simo

    AU - Suni, Ilkka

    AU - Molarius, Jyrki

    AU - Kuivalainen, Pekka

    AU - Ristolainen, Eero

    AU - Tuomi, T

    PY - 1994/5/3

    Y1 - 1994/5/3

    N2 - (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.

    AB - (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge+ ions at doses of the order of 1 × 1016cm−2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time (T−t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16 O(α,α)16 RBS resonance channeling and SIMS.

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