RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers

Jaakko Saarilahti, Zheng Xia, Hannu Ronkainen, Pekka Kuivalainen, Ilkka Suni

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.
    Original languageEnglish
    Pages (from-to)212-215
    Number of pages4
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1 Jan 1994
    MoE publication typeA1 Journal article-refereed

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