RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers

Jaakko Saarilahti, Zheng Xia, Hannu Ronkainen, Pekka Kuivalainen, Ilkka Suni

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.
    Original languageEnglish
    Pages (from-to)212-215
    Number of pages4
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1 Jan 1994
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Spectroscopy
    Implantation
    Ion Implantation
    SiGe
    Dose
    Energy
    implantation
    spectroscopy
    dosage
    ion implantation
    energy
    Regrowth
    Germanium
    energy methods
    Furnace
    Energy Method
    Annealing
    furnaces
    bombardment
    germanium

    Cite this

    Saarilahti, Jaakko ; Xia, Zheng ; Ronkainen, Hannu ; Kuivalainen, Pekka ; Suni, Ilkka. / RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 212-215.
    @article{6404208e8e0342bc83d693c77116a516,
    title = "RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers",
    abstract = "Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.",
    author = "Jaakko Saarilahti and Zheng Xia and Hannu Ronkainen and Pekka Kuivalainen and Ilkka Suni",
    year = "1994",
    month = "1",
    day = "1",
    doi = "10.1088/0031-8949/1994/T54/053",
    language = "English",
    volume = "1994",
    pages = "212--215",
    journal = "Physica Scripta",
    issn = "0031-8949",
    publisher = "Institute of Physics IOP",
    number = "T54",

    }

    RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers. / Saarilahti, Jaakko; Xia, Zheng; Ronkainen, Hannu; Kuivalainen, Pekka; Suni, Ilkka.

    In: Physica Scripta, Vol. 1994, No. T54, 01.01.1994, p. 212-215.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers

    AU - Saarilahti, Jaakko

    AU - Xia, Zheng

    AU - Ronkainen, Hannu

    AU - Kuivalainen, Pekka

    AU - Suni, Ilkka

    PY - 1994/1/1

    Y1 - 1994/1/1

    N2 - Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.

    AB - Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.

    UR - http://www.scopus.com/inward/record.url?scp=84957332038&partnerID=8YFLogxK

    U2 - 10.1088/0031-8949/1994/T54/053

    DO - 10.1088/0031-8949/1994/T54/053

    M3 - Article

    AN - SCOPUS:84957332038

    VL - 1994

    SP - 212

    EP - 215

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T54

    ER -