Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.
Saarilahti, J., Xia, Z., Ronkainen, H., Kuivalainen, P., & Suni, I. (1994). RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers. Physica Scripta, 1994(T54), 212-215. https://doi.org/10.1088/0031-8949/1994/T54/053