RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers

Jaakko Saarilahti, Zheng Xia, Hannu Ronkainen, Pekka Kuivalainen, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.
Original languageEnglish
Pages (from-to)212-215
Number of pages4
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1 Jan 1994
MoE publication typeA1 Journal article-refereed

Fingerprint

Spectroscopy
Implantation
Ion Implantation
SiGe
Dose
Energy
implantation
spectroscopy
dosage
ion implantation
energy
Regrowth
Germanium
energy methods
Furnace
Energy Method
Annealing
furnaces
bombardment
germanium

Cite this

Saarilahti, Jaakko ; Xia, Zheng ; Ronkainen, Hannu ; Kuivalainen, Pekka ; Suni, Ilkka. / RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 212-215.
@article{6404208e8e0342bc83d693c77116a516,
title = "RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers",
abstract = "Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.",
author = "Jaakko Saarilahti and Zheng Xia and Hannu Ronkainen and Pekka Kuivalainen and Ilkka Suni",
year = "1994",
month = "1",
day = "1",
doi = "10.1088/0031-8949/1994/T54/053",
language = "English",
volume = "1994",
pages = "212--215",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",
number = "T54",

}

RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers. / Saarilahti, Jaakko; Xia, Zheng; Ronkainen, Hannu; Kuivalainen, Pekka; Suni, Ilkka.

In: Physica Scripta, Vol. 1994, No. T54, 01.01.1994, p. 212-215.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - RBS channeling spectroscopy of Ge implanted epitaxial Si1-x Gex layers

AU - Saarilahti, Jaakko

AU - Xia, Zheng

AU - Ronkainen, Hannu

AU - Kuivalainen, Pekka

AU - Suni, Ilkka

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.

AB - Si1-xGex layers were formed through high-dose germanium ion implantation into (100)Si substrates. Two alternative implantation techniques along with that of the single-energy Ge+ implantation were separately adopted: the double-energy Si+ and Ge+ method, and the double-energy Ge+ and Ge++ method. The purpose of the both double-energy methods was to form deeper amorphous layers by using relatively low-dose Si+ or Ge++ ion bombardment while the SiGe alloy layers were created by high dose Ge+ ion implantations. Furthermore, all the amorphized samples were epitaxialy regrown by conventional furnace annealing at temperature of 525 to 600°C. RBS channeling spectroscopy was used for optimizing these implantation processes. Measurements confirm that the double-energy Ge+ and Ge++ method is optimum because of generating fewer residual defects. Additionally, the preliminary result on the regrowth properties of the double-energy Ge+ and Ge++ implanted SiGe layer is also presented.

UR - http://www.scopus.com/inward/record.url?scp=84957332038&partnerID=8YFLogxK

U2 - 10.1088/0031-8949/1994/T54/053

DO - 10.1088/0031-8949/1994/T54/053

M3 - Article

VL - 1994

SP - 212

EP - 215

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T54

ER -