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RBS channeling spectroscopy of Ge implanted epitaxial Si
1-x
Ge
x
layers
Jaakko Saarilahti
, Zheng Xia
, Hannu Ronkainen
, Pekka Kuivalainen
, Ilkka Suni
Research output
:
Contribution to journal
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Article
›
Scientific
›
peer-review
Overview
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Dive into the research topics of 'RBS channeling spectroscopy of Ge implanted epitaxial Si
1-x
Ge
x
layers'. Together they form a unique fingerprint.
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Keyphrases
High Dose
100%
Ion Implantation
100%
Epitaxial
100%
RBS Channelling
100%
Ion Bombardment
50%
Germanium
50%
Residual Defect
50%
Single-particle Energy
50%
Regrowth
50%
Si Substrate
50%
Energy Method
50%
Amorphous Layer
50%
Si1-xGex
50%
SiGe Layer
50%
GeSn Alloy
50%
Reimplantation
50%
Alloy Layer
50%
Conventional Furnace Annealing
50%
INIS
layers
100%
energy
100%
spectroscopy
100%
epitaxy
100%
channeling
100%
rbs
100%
doses
50%
germanium ions
50%
ion implantation
33%
germanium silicides
33%
optimization
16%
substrates
16%
annealing
16%
alloys
16%
ion beams
16%
defects
16%
furnaces
16%
silicon ions
16%
Chemistry
Rutherford Backscattering Spectroscopy
100%
Germanium Ion
100%
Spectroscopy
100%
Ion Implantation
66%
Silicon Ion
33%
Ion Bombardment
33%
Engineering
Ge Energy
100%
Channelling
100%
Ion Implantation
75%
Si Substrate
25%
Alloy Layer
25%
Annealing Furnace
25%
Energy Method
25%
Material Science
Germanium Ion
100%
Ion Implantation
66%
Annealing
33%
Si-Ge Alloys
33%
Silicon Ion
33%
Ion Bombardment
33%