Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

M. F. Zhu, Ilkka Suni, Marc Nicolet, T. Sands

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Amorphous films of Ni‐W and Ni‐N‐W were deposited on single‐crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni‐W and Ni‐N‐W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x‐ray diffraction, cross‐sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross‐sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C.
Original languageEnglish
Article number2740
JournalJournal of Applied Physics
Volume56
Issue number10
DOIs
Publication statusPublished - 1984
MoE publication typeNot Eligible

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silicon
temperature
crystallization
transmission electron microscopy
gas discharges
backscattering
nickel
nitrogen
electrical resistivity
diffraction
spectroscopy

Cite this

Zhu, M. F. ; Suni, Ilkka ; Nicolet, Marc ; Sands, T. / Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon. In: Journal of Applied Physics. 1984 ; Vol. 56, No. 10.
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title = "Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon",
abstract = "Amorphous films of Ni‐W and Ni‐N‐W were deposited on single‐crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni‐W and Ni‐N‐W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x‐ray diffraction, cross‐sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross‐sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C.",
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Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon. / Zhu, M. F.; Suni, Ilkka; Nicolet, Marc; Sands, T.

In: Journal of Applied Physics, Vol. 56, No. 10, 2740, 1984.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

AU - Zhu, M. F.

AU - Suni, Ilkka

AU - Nicolet, Marc

AU - Sands, T.

PY - 1984

Y1 - 1984

N2 - Amorphous films of Ni‐W and Ni‐N‐W were deposited on single‐crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni‐W and Ni‐N‐W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x‐ray diffraction, cross‐sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross‐sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C.

AB - Amorphous films of Ni‐W and Ni‐N‐W were deposited on single‐crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni‐W and Ni‐N‐W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x‐ray diffraction, cross‐sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross‐sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C.

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DO - 10.1063/1.333804

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VL - 56

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 2740

ER -