Reactive phase formation in thin film metal/metal and metal/silicon diffusion couples

Tomi Laurila (Corresponding Author), Jyrki Molarius

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

There have been number of efforts to develop a model that could be used to predict and to describe phase formation in the case of thin film diffusion couples. In this report, thermodynamic and kinetic frameworks as well as some of the proposed models for interface reactions have been critically reviewed. Following conclusions have been made: Firstly, in the early stage, solid-state interface reaction is a kinetic process. Phase selection and phase formation sequence are controlled mainly by nucleation kinetics and/or growth kinetics. Secondly, in order to simulate interface reactions in thin film diffusion couples, kinetic description of the system is required and should be combined with the thermodynamic description. This in turn requires the assumption of local thermodynamic equilibrium in the system. However, whether or not local equilibrium can be assumed at the interface in a thin film system depends on the thickness of the films, nucleation and growth kinetics, and the diffusivity of elements in the product phases. Finally, based on the theoretical considerations it appears that there is no fundamental difference between thin film and bulk diffusion couples.
Original languageEnglish
Pages (from-to)185-230
Number of pages46
JournalCritical Reviews in Solid State and Materials Sciences
Volume28
Issue number3
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

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Silicon
Metals
Thin films
Growth kinetics
kinetics
Thermodynamics
silicon
thin films
metals
Nucleation
Interface states
nucleation
thermodynamics
local thermodynamic equilibrium
diffusivity
solid state
products

Cite this

@article{2694bce4c7e54557b6836012e6f126cd,
title = "Reactive phase formation in thin film metal/metal and metal/silicon diffusion couples",
abstract = "There have been number of efforts to develop a model that could be used to predict and to describe phase formation in the case of thin film diffusion couples. In this report, thermodynamic and kinetic frameworks as well as some of the proposed models for interface reactions have been critically reviewed. Following conclusions have been made: Firstly, in the early stage, solid-state interface reaction is a kinetic process. Phase selection and phase formation sequence are controlled mainly by nucleation kinetics and/or growth kinetics. Secondly, in order to simulate interface reactions in thin film diffusion couples, kinetic description of the system is required and should be combined with the thermodynamic description. This in turn requires the assumption of local thermodynamic equilibrium in the system. However, whether or not local equilibrium can be assumed at the interface in a thin film system depends on the thickness of the films, nucleation and growth kinetics, and the diffusivity of elements in the product phases. Finally, based on the theoretical considerations it appears that there is no fundamental difference between thin film and bulk diffusion couples.",
author = "Tomi Laurila and Jyrki Molarius",
note = "Project code: Z1SU00150",
year = "2003",
doi = "10.1080/10408430390261955",
language = "English",
volume = "28",
pages = "185--230",
journal = "Critical Reviews in Solid State and Materials Sciences",
issn = "1040-8436",
publisher = "CRC Press",
number = "3",

}

Reactive phase formation in thin film metal/metal and metal/silicon diffusion couples. / Laurila, Tomi (Corresponding Author); Molarius, Jyrki.

In: Critical Reviews in Solid State and Materials Sciences, Vol. 28, No. 3, 2003, p. 185-230.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Reactive phase formation in thin film metal/metal and metal/silicon diffusion couples

AU - Laurila, Tomi

AU - Molarius, Jyrki

N1 - Project code: Z1SU00150

PY - 2003

Y1 - 2003

N2 - There have been number of efforts to develop a model that could be used to predict and to describe phase formation in the case of thin film diffusion couples. In this report, thermodynamic and kinetic frameworks as well as some of the proposed models for interface reactions have been critically reviewed. Following conclusions have been made: Firstly, in the early stage, solid-state interface reaction is a kinetic process. Phase selection and phase formation sequence are controlled mainly by nucleation kinetics and/or growth kinetics. Secondly, in order to simulate interface reactions in thin film diffusion couples, kinetic description of the system is required and should be combined with the thermodynamic description. This in turn requires the assumption of local thermodynamic equilibrium in the system. However, whether or not local equilibrium can be assumed at the interface in a thin film system depends on the thickness of the films, nucleation and growth kinetics, and the diffusivity of elements in the product phases. Finally, based on the theoretical considerations it appears that there is no fundamental difference between thin film and bulk diffusion couples.

AB - There have been number of efforts to develop a model that could be used to predict and to describe phase formation in the case of thin film diffusion couples. In this report, thermodynamic and kinetic frameworks as well as some of the proposed models for interface reactions have been critically reviewed. Following conclusions have been made: Firstly, in the early stage, solid-state interface reaction is a kinetic process. Phase selection and phase formation sequence are controlled mainly by nucleation kinetics and/or growth kinetics. Secondly, in order to simulate interface reactions in thin film diffusion couples, kinetic description of the system is required and should be combined with the thermodynamic description. This in turn requires the assumption of local thermodynamic equilibrium in the system. However, whether or not local equilibrium can be assumed at the interface in a thin film system depends on the thickness of the films, nucleation and growth kinetics, and the diffusivity of elements in the product phases. Finally, based on the theoretical considerations it appears that there is no fundamental difference between thin film and bulk diffusion couples.

U2 - 10.1080/10408430390261955

DO - 10.1080/10408430390261955

M3 - Article

VL - 28

SP - 185

EP - 230

JO - Critical Reviews in Solid State and Materials Sciences

JF - Critical Reviews in Solid State and Materials Sciences

SN - 1040-8436

IS - 3

ER -