Reactive sputter deposition and properties of TaxN thin films

Tommi Riekkinen, Jyrki Molarius, T. Laurila, Arto Nurmela, Ilkka Suni, J.K. Kivilahti

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

122 Citations (Scopus)

Abstract

The aim of this work was to evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters. Thin TaxN films were deposited reactively on Si wafers using reactive RF magnetron sputtering at various N2/Ar gas ratios. The films were investigated by four-point probe sheet resistance measurement, profilometry, X-ray diffraction, scanning electron microscope, 2 MeV 4He+ backscattering spectroscopy, and atomic force microscopy. As the amount of nitrogen was increased, the phases in the as-deposited films were identified as β-Ta, Ta2N (5% N2-flow), hexagonal TaN (10% N2-flow) and f.c.c.-TaN (15% N2-flow) with resistivities of 166 μΩ cm, 234 μΩ cm, 505 μΩ cm and 531 μΩ cm, respectively. Only the phase obtained at 5% N2-flow showed a reasonable uniformity over the wafer suggesting suitability as thin film resistors. The value of temperature coefficient of resistance (TCR) determined for the Ta2N thin film resistor was −103 ppm/°C.
Original languageEnglish
Pages (from-to)289-297
JournalMicroelectronic Engineering
Volume64
Issue number1-4
DOIs
Publication statusPublished - 2002
MoE publication typeA4 Article in a conference publication

Fingerprint

Sputter deposition
Thin films
thin films
resistors
Resistors
wafers
tantalum nitrides
Tantalum
Profilometry
Reactive sputtering
Sheet resistance
Backscattering
Nitrides
Magnetron sputtering
Atomic force microscopy
backscattering
magnetron sputtering
Electron microscopes
Nitrogen
electron microscopes

Cite this

Riekkinen, T., Molarius, J., Laurila, T., Nurmela, A., Suni, I., & Kivilahti, J. K. (2002). Reactive sputter deposition and properties of TaxN thin films. Microelectronic Engineering, 64(1-4), 289-297. https://doi.org/10.1016/S0167-9317(02)00801-8
Riekkinen, Tommi ; Molarius, Jyrki ; Laurila, T. ; Nurmela, Arto ; Suni, Ilkka ; Kivilahti, J.K. / Reactive sputter deposition and properties of TaxN thin films. In: Microelectronic Engineering. 2002 ; Vol. 64, No. 1-4. pp. 289-297.
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Riekkinen, T, Molarius, J, Laurila, T, Nurmela, A, Suni, I & Kivilahti, JK 2002, 'Reactive sputter deposition and properties of TaxN thin films', Microelectronic Engineering, vol. 64, no. 1-4, pp. 289-297. https://doi.org/10.1016/S0167-9317(02)00801-8

Reactive sputter deposition and properties of TaxN thin films. / Riekkinen, Tommi; Molarius, Jyrki; Laurila, T.; Nurmela, Arto; Suni, Ilkka; Kivilahti, J.K.

In: Microelectronic Engineering, Vol. 64, No. 1-4, 2002, p. 289-297.

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

TY - JOUR

T1 - Reactive sputter deposition and properties of TaxN thin films

AU - Riekkinen, Tommi

AU - Molarius, Jyrki

AU - Laurila, T.

AU - Nurmela, Arto

AU - Suni, Ilkka

AU - Kivilahti, J.K.

PY - 2002

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N2 - The aim of this work was to evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters. Thin TaxN films were deposited reactively on Si wafers using reactive RF magnetron sputtering at various N2/Ar gas ratios. The films were investigated by four-point probe sheet resistance measurement, profilometry, X-ray diffraction, scanning electron microscope, 2 MeV 4He+ backscattering spectroscopy, and atomic force microscopy. As the amount of nitrogen was increased, the phases in the as-deposited films were identified as β-Ta, Ta2N (5% N2-flow), hexagonal TaN (10% N2-flow) and f.c.c.-TaN (15% N2-flow) with resistivities of 166 μΩ cm, 234 μΩ cm, 505 μΩ cm and 531 μΩ cm, respectively. Only the phase obtained at 5% N2-flow showed a reasonable uniformity over the wafer suggesting suitability as thin film resistors. The value of temperature coefficient of resistance (TCR) determined for the Ta2N thin film resistor was −103 ppm/°C.

AB - The aim of this work was to evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters. Thin TaxN films were deposited reactively on Si wafers using reactive RF magnetron sputtering at various N2/Ar gas ratios. The films were investigated by four-point probe sheet resistance measurement, profilometry, X-ray diffraction, scanning electron microscope, 2 MeV 4He+ backscattering spectroscopy, and atomic force microscopy. As the amount of nitrogen was increased, the phases in the as-deposited films were identified as β-Ta, Ta2N (5% N2-flow), hexagonal TaN (10% N2-flow) and f.c.c.-TaN (15% N2-flow) with resistivities of 166 μΩ cm, 234 μΩ cm, 505 μΩ cm and 531 μΩ cm, respectively. Only the phase obtained at 5% N2-flow showed a reasonable uniformity over the wafer suggesting suitability as thin film resistors. The value of temperature coefficient of resistance (TCR) determined for the Ta2N thin film resistor was −103 ppm/°C.

U2 - 10.1016/S0167-9317(02)00801-8

DO - 10.1016/S0167-9317(02)00801-8

M3 - Article in a proceedings journal

VL - 64

SP - 289

EP - 297

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

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Riekkinen T, Molarius J, Laurila T, Nurmela A, Suni I, Kivilahti JK. Reactive sputter deposition and properties of TaxN thin films. Microelectronic Engineering. 2002;64(1-4):289-297. https://doi.org/10.1016/S0167-9317(02)00801-8