Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

Lauri Riuttanen, Pyry Kivisaari, Nikolai Mäntyoja, Jani Oksanen, Muhammad Ali, Sami Suihkonen, Markku Sopanen

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	327-331
Number of pages	5
Journal	Physica Status Solidi C: Current Topics in Solid State Physics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1002/pssc.201200670
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

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@article{6cf6212c46c746ee99f0c5d39980171b,

title = "Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis",

author = "Lauri Riuttanen and Pyry Kivisaari and Nikolai M{\"a}ntyoja and Jani Oksanen and Muhammad Ali and Sami Suihkonen and Markku Sopanen",

year = "2013",

doi = "10.1002/pssc.201200670",

language = "English",

volume = "10",

pages = "327--331",

journal = "Physica Status Solidi C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3",

}

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

AU - Riuttanen, Lauri

AU - Kivisaari, Pyry

AU - Mäntyoja, Nikolai

AU - Oksanen, Jani

AU - Ali, Muhammad

AU - Suihkonen, Sami

AU - Sopanen, Markku

PY - 2013

Y1 - 2013

U2 - 10.1002/pssc.201200670

DO - 10.1002/pssc.201200670

M3 - Article

SN - 1862-6351

VL - 10

SP - 327

EP - 331

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

IS - 3

ER -