Recombination processes in strain-induced InGaAs quantum dots

J. Sandmann, S. Grosse, J. Feldmann, Harri Lipsanen, Markku Sopanen, J. Tulkki, Jouni Ahopelto

    Research output: Contribution to journalArticleScientific

    6 Citations (Scopus)

    Abstract

    We have performed time-integrated and time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs/GaAs quantum dots. The optical spectra of these dot structures exhibit large quantization effects together with remarkably low inhomogeneous broadenings of the respective excitonic transitions. Thus a detailed investigation of the relaxation and recombination dynamics within the distinct electronic dot states becomes feasible. We find that the initial relaxation of optically generated carriers down to the lowest dot states is very efficient. This fast thermalization is ascribed to Coulomb scattering between carriers confined in dot states and carriers located in the higher-energetic quantum well states.
    Original languageEnglish
    Pages (from-to)1699-1703
    JournalIl Nuovo Cimento D
    Volume17
    DOIs
    Publication statusPublished - 1995
    MoE publication typeB1 Article in a scientific magazine
    EventInternational Conference of Excitons in Confined Systems - Cortona, Italy
    Duration: 28 Aug 199531 Aug 1995

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  • Cite this

    Sandmann, J., Grosse, S., Feldmann, J., Lipsanen, H., Sopanen, M., Tulkki, J., & Ahopelto, J. (1995). Recombination processes in strain-induced InGaAs quantum dots. Il Nuovo Cimento D, 17, 1699-1703. https://doi.org/10.1007/BF02457266