Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits

R. Malmqvist; C. Samuelsson; W. Simon; D. Smith; Pekka Rantakari; Tauno Vähä-Heikkilä; S. Reyaz; Jussi Varis; R. Baggen

Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits

R. Malmqvist, C. Samuelsson, W. Simon, D. Smith, Pekka Rantakari, Tauno Vähä-Heikkilä, S. Reyaz, Jussi Varis, R. Baggen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of isolation at 18 GHz. The ohmic contact and capacitive RF-MEMS low-power switched LNAs maintain a high gain and linearity together with NF=3-5 dB at 5-26 GHz and 12-26 GHz, respectively. The two reconfigurable wideband LNAs further present 18 dB and 11 dB of switched (ON and OFF state) isolation at 18 GHz

Original language	English
Title of host publication	Proceedings of the 6th European Microwave Integrated Circuits Conference
Publisher	European Microwave Association (EuMA)
Pages	160-163
ISBN (Electronic)	978-2-8748-7023-1
ISBN (Print)	978-1-6128-4236-3
Publication status	Published - 2011
MoE publication type	A4 Article in a conference publication
Event	6th European Microwave Conference, EuMC 2011 - Manchester, United Kingdom Duration: 10 Oct 2011 → 11 Oct 2011

Conference

Conference	6th European Microwave Conference, EuMC 2011
Abbreviated title	EuMC 2011
Country/Territory	United Kingdom
City	Manchester
Period	10/10/11 → 11/10/11

Keywords

Low noise amplifiers
MMIC
radio frequency microelectromechanical systems
switches

Access to Document

https://ieeexplore.ieee.org/document/6102835

Cite this

Malmqvist, R., Samuelsson, C., Simon, W., Smith, D., Rantakari, P., Vähä-Heikkilä, T., Reyaz, S., Varis, J., & Baggen, R. (2011). Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits. In Proceedings of the 6th European Microwave Integrated Circuits Conference (pp. 160-163). European Microwave Association (EuMA). https://ieeexplore.ieee.org/document/6102835

@inproceedings{d88fd711a1b84d8ba05893201c281cf5,

title = "Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits",

abstract = "We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of isolation at 18 GHz. The ohmic contact and capacitive RF-MEMS low-power switched LNAs maintain a high gain and linearity together with NF=3-5 dB at 5-26 GHz and 12-26 GHz, respectively. The two reconfigurable wideband LNAs further present 18 dB and 11 dB of switched (ON and OFF state) isolation at 18 GHz",

keywords = "Low noise amplifiers, MMIC, radio frequency microelectromechanical systems, switches",

author = "R. Malmqvist and C. Samuelsson and W. Simon and D. Smith and Pekka Rantakari and Tauno V{\"a}h{\"a}-Heikkil{\"a} and S. Reyaz and Jussi Varis and R. Baggen",

note = "Project code: 20392; 6th European Microwave Conference, EuMC 2011, EuMC 2011 ; Conference date: 10-10-2011 Through 11-10-2011",

year = "2011",

language = "English",

isbn = "978-1-6128-4236-3",

pages = "160--163",

booktitle = "Proceedings of the 6th European Microwave Integrated Circuits Conference",

publisher = "European Microwave Association (EuMA)",

address = "Belgium",

}

Malmqvist, R, Samuelsson, C, Simon, W, Smith, D, Rantakari, P , Vähä-Heikkilä, T, Reyaz, S, Varis, J & Baggen, R 2011, Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits. in Proceedings of the 6th European Microwave Integrated Circuits Conference. European Microwave Association (EuMA), pp. 160-163, 6th European Microwave Conference, EuMC 2011, Manchester, United Kingdom, 10/10/11. <https://ieeexplore.ieee.org/document/6102835>

Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits. / Malmqvist, R.; Samuelsson, C.; Simon, W. et al.
Proceedings of the 6th European Microwave Integrated Circuits Conference. European Microwave Association (EuMA), 2011. p. 160-163.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits

AU - Malmqvist, R.

AU - Samuelsson, C.

AU - Simon, W.

AU - Smith, D.

AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

AU - Reyaz, S.

AU - Varis, Jussi

AU - Baggen, R.

N1 - Project code: 20392

PY - 2011

Y1 - 2011

N2 - We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of isolation at 18 GHz. The ohmic contact and capacitive RF-MEMS low-power switched LNAs maintain a high gain and linearity together with NF=3-5 dB at 5-26 GHz and 12-26 GHz, respectively. The two reconfigurable wideband LNAs further present 18 dB and 11 dB of switched (ON and OFF state) isolation at 18 GHz

AB - We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of isolation at 18 GHz. The ohmic contact and capacitive RF-MEMS low-power switched LNAs maintain a high gain and linearity together with NF=3-5 dB at 5-26 GHz and 12-26 GHz, respectively. The two reconfigurable wideband LNAs further present 18 dB and 11 dB of switched (ON and OFF state) isolation at 18 GHz

KW - Low noise amplifiers

KW - MMIC

KW - radio frequency microelectromechanical systems

KW - switches

M3 - Conference article in proceedings

SN - 978-1-6128-4236-3

SP - 160

EP - 163

BT - Proceedings of the 6th European Microwave Integrated Circuits Conference

PB - European Microwave Association (EuMA)

T2 - 6th European Microwave Conference, EuMC 2011

Y2 - 10 October 2011 through 11 October 2011

ER -

Reconfigurable wideband LNAs using ohmic contact and capacitive RF-MEMS switching circuits

Abstract

Conference

Keywords

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