Red luminence from strain-induced GaInP quantum dots

Markku Sopanen, M. Taskinen, Harri Lipsanen, Jouni Ahopelto, J. Tulkki

    Research output: Contribution to journalArticleScientificpeer-review

    16 Citations (Scopus)


    The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.
    Original languageEnglish
    Pages (from-to)3393-3395
    Number of pages5
    JournalApplied Physics Letters
    Issue number22
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed


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