Red luminence from strain-induced GaInP quantum dots

Markku Sopanen, M. Taskinen, Harri Lipsanen, Jouni Ahopelto, J. Tulkki

    Research output: Contribution to journalArticleScientificpeer-review

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    Abstract

    The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.
    Original languageEnglish
    Pages (from-to)3393-3395
    Number of pages5
    JournalApplied Physics Letters
    Volume69
    Issue number22
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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    quantum dots
    quantum wells
    luminescence
    caps
    aluminum gallium arsenides
    wavelengths

    Cite this

    Sopanen, M., Taskinen, M., Lipsanen, H., Ahopelto, J., & Tulkki, J. (1996). Red luminence from strain-induced GaInP quantum dots. Applied Physics Letters, 69(22), 3393-3395. https://doi.org/10.1063/1.117270
    Sopanen, Markku ; Taskinen, M. ; Lipsanen, Harri ; Ahopelto, Jouni ; Tulkki, J. / Red luminence from strain-induced GaInP quantum dots. In: Applied Physics Letters. 1996 ; Vol. 69, No. 22. pp. 3393-3395.
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    abstract = "The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.",
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    Sopanen, M, Taskinen, M, Lipsanen, H, Ahopelto, J & Tulkki, J 1996, 'Red luminence from strain-induced GaInP quantum dots', Applied Physics Letters, vol. 69, no. 22, pp. 3393-3395. https://doi.org/10.1063/1.117270

    Red luminence from strain-induced GaInP quantum dots. / Sopanen, Markku; Taskinen, M.; Lipsanen, Harri; Ahopelto, Jouni; Tulkki, J.

    In: Applied Physics Letters, Vol. 69, No. 22, 1996, p. 3393-3395.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Red luminence from strain-induced GaInP quantum dots

    AU - Sopanen, Markku

    AU - Taskinen, M.

    AU - Lipsanen, Harri

    AU - Ahopelto, Jouni

    AU - Tulkki, J.

    PY - 1996

    Y1 - 1996

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    AB - The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

    U2 - 10.1063/1.117270

    DO - 10.1063/1.117270

    M3 - Article

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    SP - 3393

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