Red luminence from strain-induced GaInP quantum dots

Markku Sopanen; M. Taskinen; Harri Lipsanen; Jouni Ahopelto; J. Tulkki

doi:10.1063/1.117270

Red luminence from strain-induced GaInP quantum dots

Markku Sopanen, M. Taskinen, Harri Lipsanen, Jouni Ahopelto, J. Tulkki

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

16 Citations (Scopus)

Abstract

The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

Original language	English
Pages (from-to)	3393-3395
Number of pages	5
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117270
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.117270

Cite this

@article{fd7316d32f9a4d3bbd85d0d0e3ed4fd3,

title = "Red luminence from strain-induced GaInP quantum dots",

abstract = "The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.",

author = "Markku Sopanen and M. Taskinen and Harri Lipsanen and Jouni Ahopelto and J. Tulkki",

year = "1996",

doi = "10.1063/1.117270",

language = "English",

volume = "69",

pages = "3393--3395",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "22",

}

TY - JOUR

T1 - Red luminence from strain-induced GaInP quantum dots

AU - Sopanen, Markku

AU - Taskinen, M.

AU - Lipsanen, Harri

AU - Ahopelto, Jouni

AU - Tulkki, J.

PY - 1996

Y1 - 1996

N2 - The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

AB - The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

U2 - 10.1063/1.117270

DO - 10.1063/1.117270

M3 - Article

SN - 0003-6951

VL - 69

SP - 3393

EP - 3395

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Red luminence from strain-induced GaInP quantum dots

Abstract

Access to Document

Fingerprint

Cite this