Red luminence from strain-induced GaInP quantum dots

Markku Sopanen, M. Taskinen, Harri Lipsanen, Jouni Ahopelto, J. Tulkki

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.
Original languageEnglish
Pages (from-to)3393-3395
Number of pages5
JournalApplied Physics Letters
Volume69
Issue number22
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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quantum dots
quantum wells
luminescence
caps
aluminum gallium arsenides
wavelengths

Cite this

Sopanen, M., Taskinen, M., Lipsanen, H., Ahopelto, J., & Tulkki, J. (1996). Red luminence from strain-induced GaInP quantum dots. Applied Physics Letters, 69(22), 3393-3395. https://doi.org/10.1063/1.117270
Sopanen, Markku ; Taskinen, M. ; Lipsanen, Harri ; Ahopelto, Jouni ; Tulkki, J. / Red luminence from strain-induced GaInP quantum dots. In: Applied Physics Letters. 1996 ; Vol. 69, No. 22. pp. 3393-3395.
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Sopanen, M, Taskinen, M, Lipsanen, H, Ahopelto, J & Tulkki, J 1996, 'Red luminence from strain-induced GaInP quantum dots', Applied Physics Letters, vol. 69, no. 22, pp. 3393-3395. https://doi.org/10.1063/1.117270

Red luminence from strain-induced GaInP quantum dots. / Sopanen, Markku; Taskinen, M.; Lipsanen, Harri; Ahopelto, Jouni; Tulkki, J.

In: Applied Physics Letters, Vol. 69, No. 22, 1996, p. 3393-3395.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Red luminence from strain-induced GaInP quantum dots

AU - Sopanen, Markku

AU - Taskinen, M.

AU - Lipsanen, Harri

AU - Ahopelto, Jouni

AU - Tulkki, J.

PY - 1996

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N2 - The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

AB - The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

U2 - 10.1063/1.117270

DO - 10.1063/1.117270

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SP - 3393

EP - 3395

JO - Applied Physics Letters

JF - Applied Physics Letters

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