Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

Muhammad Ali, Olli Svensk, Zhu Zhen, Sami Suihkonen, Pekka Törmä, Harri Lipsanen, Markku Sopanen, K. Hjort, J. Jensen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)4925-4928
Number of pages4
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - 15 Dec 2009
MoE publication typeA1 Journal article-refereed

Keywords

  • Defects
  • High-energy ion irradiation
  • InGaN
  • Ion beam analysis
  • Optoelectronic devices
  • Photoluminescence

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