Abstract
The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 4925-4928 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 404 |
Issue number | 23-24 |
DOIs | |
Publication status | Published - 15 Dec 2009 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Defects
- High-energy ion irradiation
- InGaN
- Ion beam analysis
- Optoelectronic devices
- Photoluminescence