Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition

Riikka Puurunen, Ari Häärä, Heini Ritala, James R. Dekker, Markku Kainlauri, Harri Pohjonen, Tommi Suni, Jyrki Kiihamäki, E. Santala, M. Leskelä, Hannu Kattelus

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

4 Citations (Scopus)

Abstract

Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems).
The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness.
Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages1887-1890
ISBN (Electronic)978-1-4577-0156-6
ISBN (Print)978-1-4577-0157-3
DOIs
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
Event16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 5 Jun 20119 Jun 2011

Conference

Conference16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Abbreviated titleTRANSDUCERS'11
CountryChina
CityBeijing
Period5/06/119/06/11

Fingerprint

stiction
atomic layer epitaxy
microelectromechanical systems
cantilever beams
silicon
adhesion
roughness
energy

Cite this

Puurunen, R., Häärä, A., Ritala, H., Dekker, J. R., Kainlauri, M., Pohjonen, H., ... Kattelus, H. (2011). Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. In Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011 (pp. 1887-1890). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/TRANSDUCERS.2011.5969776
Puurunen, Riikka ; Häärä, Ari ; Ritala, Heini ; Dekker, James R. ; Kainlauri, Markku ; Pohjonen, Harri ; Suni, Tommi ; Kiihamäki, Jyrki ; Santala, E. ; Leskelä, M. ; Kattelus, Hannu. / Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. Institute of Electrical and Electronic Engineers IEEE, 2011. pp. 1887-1890
@inproceedings{f32406658a6647b4a6f8677f34e6666d,
title = "Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition",
abstract = "Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems). The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness. Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.",
author = "Riikka Puurunen and Ari H{\"a}{\"a}r{\"a} and Heini Ritala and Dekker, {James R.} and Markku Kainlauri and Harri Pohjonen and Tommi Suni and Jyrki Kiiham{\"a}ki and E. Santala and M. Leskel{\"a} and Hannu Kattelus",
year = "2011",
doi = "10.1109/TRANSDUCERS.2011.5969776",
language = "English",
isbn = "978-1-4577-0157-3",
pages = "1887--1890",
booktitle = "Proceedings",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Puurunen, R, Häärä, A, Ritala, H, Dekker, JR, Kainlauri, M, Pohjonen, H, Suni, T, Kiihamäki, J, Santala, E, Leskelä, M & Kattelus, H 2011, Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. in Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. Institute of Electrical and Electronic Engineers IEEE, pp. 1887-1890, 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969776

Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. / Puurunen, Riikka; Häärä, Ari; Ritala, Heini; Dekker, James R.; Kainlauri, Markku; Pohjonen, Harri; Suni, Tommi; Kiihamäki, Jyrki; Santala, E.; Leskelä, M.; Kattelus, Hannu.

Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. Institute of Electrical and Electronic Engineers IEEE, 2011. p. 1887-1890.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition

AU - Puurunen, Riikka

AU - Häärä, Ari

AU - Ritala, Heini

AU - Dekker, James R.

AU - Kainlauri, Markku

AU - Pohjonen, Harri

AU - Suni, Tommi

AU - Kiihamäki, Jyrki

AU - Santala, E.

AU - Leskelä, M.

AU - Kattelus, Hannu

PY - 2011

Y1 - 2011

N2 - Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems). The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness. Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.

AB - Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems). The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness. Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.

U2 - 10.1109/TRANSDUCERS.2011.5969776

DO - 10.1109/TRANSDUCERS.2011.5969776

M3 - Conference article in proceedings

SN - 978-1-4577-0157-3

SP - 1887

EP - 1890

BT - Proceedings

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Puurunen R, Häärä A, Ritala H, Dekker JR, Kainlauri M, Pohjonen H et al. Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. In Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. Institute of Electrical and Electronic Engineers IEEE. 2011. p. 1887-1890 https://doi.org/10.1109/TRANSDUCERS.2011.5969776