Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition

Riikka Puurunen; Ari Häärä; Heini Ritala; James R. Dekker; Markku Kainlauri; Harri Pohjonen; Tommi Suni; Jyrki Kiihamäki; E. Santala; M. Leskelä; Hannu Kattelus

doi:10.1109/TRANSDUCERS.2011.5969776

Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition

Riikka Puurunen
, Ari Häärä
, Heini Ritala
, James R. Dekker
, Markku Kainlauri
, Harri Pohjonen
, Tommi Suni
, Jyrki Kiihamäki
, E. Santala
, M. Leskelä
, Hannu Kattelus

University of Helsinki

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems).
The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness.
Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1887-1890
ISBN (Electronic)	978-1-4577-0156-6
ISBN (Print)	978-1-4577-0157-3
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969776
Publication status	Published - 2011
MoE publication type	A4 Article in a conference publication
Event	16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11 - Beijing, China Duration: 5 Jun 2011 → 9 Jun 2011

Conference

Conference	16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11
Abbreviated title	TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	5/06/11 → 9/06/11

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10.1109/TRANSDUCERS.2011.5969776

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Puurunen, R., Häärä, A., Ritala, H., Dekker, J. R., Kainlauri, M., Pohjonen, H., Suni, T., Kiihamäki, J., Santala, E., Leskelä, M., & Kattelus, H. (2011). Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. In Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011 (pp. 1887-1890). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/TRANSDUCERS.2011.5969776

@inproceedings{f32406658a6647b4a6f8677f34e6666d,

title = "Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition",

abstract = "Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems). The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness. Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.",

author = "Riikka Puurunen and Ari H{\"a}{\"a}r{\"a} and Heini Ritala and Dekker, \{James R.\} and Markku Kainlauri and Harri Pohjonen and Tommi Suni and Jyrki Kiiham{\"a}ki and E. Santala and M. Leskel{\"a} and Hannu Kattelus",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969776",

language = "English",

isbn = "978-1-4577-0157-3",

pages = "1887--1890",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers{\textquoteright}11<br/>, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

}

Puurunen, R, Häärä, A, Ritala, H, Dekker, JR, Kainlauri, M, Pohjonen, H, Suni, T, Kiihamäki, J, Santala, E, Leskelä, M & Kattelus, H 2011, Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. in Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. IEEE Institute of Electrical and Electronic Engineers, pp. 1887-1890, 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11
, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969776

Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. / Puurunen, Riikka; Häärä, Ari; Ritala, Heini et al.
Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. IEEE Institute of Electrical and Electronic Engineers, 2011. p. 1887-1890.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition

AU - Puurunen, Riikka

AU - Häärä, Ari

AU - Ritala, Heini

AU - Dekker, James R.

AU - Kainlauri, Markku

AU - Pohjonen, Harri

AU - Suni, Tommi

AU - Kiihamäki, Jyrki

AU - Santala, E.

AU - Leskelä, M.

AU - Kattelus, Hannu

PY - 2011

Y1 - 2011

N2 - Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems). The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness. Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.

AB - Stiction during device operation remains one of the mechanisms leading to permanent failure of operating silicon-based MEMS devices (MicroElectroMechanical Systems). The goal of this work was to investigate, whether stiction between parallel, smooth silicon surfaces can be decreased by thin inorganic films grown by atomic layer deposition (ALD). Test structures based on the cantilever-beam-array (CBA) method were fabricated and coated with ALD layers varying in chemical nature and roughness. Rough crystalline TiO 2 decreased the adhesion energy orders of magnitude as compared to Si and other smooth films, indicating that TiO 2 and other crystalline ALD films are candidates for anti-stiction layers in MEMS.

U2 - 10.1109/TRANSDUCERS.2011.5969776

DO - 10.1109/TRANSDUCERS.2011.5969776

M3 - Conference article in proceedings

SN - 978-1-4577-0157-3

SP - 1887

EP - 1890

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11<br/>

Y2 - 5 June 2011 through 9 June 2011

ER -

Puurunen R, Häärä A, Ritala H, Dekker JR, Kainlauri M, Pohjonen H et al. Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition. In Proceedings: 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011. IEEE Institute of Electrical and Electronic Engineers. 2011. p. 1887-1890 doi: 10.1109/TRANSDUCERS.2011.5969776

Reducing stiction in Microelectromechanical Systems by nanometer-scale films grown by atomic layer deposition

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