Reducing the Effect of Parasitic Capacitance on MEMS Measurements

Pekka Rantakari; Jyrki Kiihamäki; Mika Koskenvuori; Tuomas Lamminmäki; Ilkka Tittonen

doi:10.1007/978-3-642-59497-7_361

Reducing the Effect of Parasitic Capacitance on MEMS Measurements

Pekka Rantakari, Jyrki Kiihamäki, Mika Koskenvuori, Tuomas Lamminmäki, Ilkka Tittonen

Helsinki University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The use of micromechanical resonant structures in RF electronics possesses often a problem caused by a very low signal amplitude. In order to alleviate the influence of parasitic capacitance we propose here the use of the differential amplifier and demonstrate its use here on the processed electrostatically driven resonators. The component used in verifying the use of differential amplifier is a clamped-clamped beam resonator with Q = 8000 and resonant frequency of f ₀ = 12.3 MHz. A low-noise high input-impedance amplifier was used as a reference.

Original language	English
Title of host publication	Transducers ’01 Eurosensors XV
Publisher	Springer
Pages	1556-1559
ISBN (Electronic)	978-3-642-59497-7
ISBN (Print)	978-3-540-42150-4
DOIs	https://doi.org/10.1007/978-3-642-59497-7_361
Publication status	Published - 2001
MoE publication type	A4 Article in a conference publication
Event	11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV - Munich, Germany Duration: 10 Jun 2001 → 14 Jun 2001

Conference

Conference	11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV
Country/Territory	Germany
City	Munich
Period	10/06/01 → 14/06/01

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10.1007/978-3-642-59497-7_361

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title = "Reducing the Effect of Parasitic Capacitance on MEMS Measurements",

abstract = "The use of micromechanical resonant structures in RF electronics possesses often a problem caused by a very low signal amplitude. In order to alleviate the influence of parasitic capacitance we propose here the use of the differential amplifier and demonstrate its use here on the processed electrostatically driven resonators. The component used in verifying the use of differential amplifier is a clamped-clamped beam resonator with Q = 8000 and resonant frequency of f 0 = 12.3 MHz. A low-noise high input-impedance amplifier was used as a reference.",

author = "Pekka Rantakari and Jyrki Kiiham{\"a}ki and Mika Koskenvuori and Tuomas Lamminm{\"a}ki and Ilkka Tittonen",

year = "2001",

doi = "10.1007/978-3-642-59497-7_361",

language = "English",

isbn = "978-3-540-42150-4",

pages = "1556--1559",

booktitle = "Transducers {\textquoteright}01 Eurosensors XV",

publisher = "Springer",

address = "Germany",

note = "11th International Conference on Solid-State Sensors and Actuators, Transducers {\textquoteright}01 Eurosensors XV ; Conference date: 10-06-2001 Through 14-06-2001",

}

Rantakari, P , Kiihamäki, J, Koskenvuori, M, Lamminmäki, T & Tittonen, I 2001, Reducing the Effect of Parasitic Capacitance on MEMS Measurements. in Transducers ’01 Eurosensors XV. Springer, pp. 1556-1559, 11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV, Munich, Germany, 10/06/01. https://doi.org/10.1007/978-3-642-59497-7_361

TY - GEN

T1 - Reducing the Effect of Parasitic Capacitance on MEMS Measurements

AU - Rantakari, Pekka

AU - Kiihamäki, Jyrki

AU - Koskenvuori, Mika

AU - Lamminmäki, Tuomas

AU - Tittonen, Ilkka

PY - 2001

Y1 - 2001

N2 - The use of micromechanical resonant structures in RF electronics possesses often a problem caused by a very low signal amplitude. In order to alleviate the influence of parasitic capacitance we propose here the use of the differential amplifier and demonstrate its use here on the processed electrostatically driven resonators. The component used in verifying the use of differential amplifier is a clamped-clamped beam resonator with Q = 8000 and resonant frequency of f 0 = 12.3 MHz. A low-noise high input-impedance amplifier was used as a reference.

AB - The use of micromechanical resonant structures in RF electronics possesses often a problem caused by a very low signal amplitude. In order to alleviate the influence of parasitic capacitance we propose here the use of the differential amplifier and demonstrate its use here on the processed electrostatically driven resonators. The component used in verifying the use of differential amplifier is a clamped-clamped beam resonator with Q = 8000 and resonant frequency of f 0 = 12.3 MHz. A low-noise high input-impedance amplifier was used as a reference.

U2 - 10.1007/978-3-642-59497-7_361

DO - 10.1007/978-3-642-59497-7_361

M3 - Conference article in proceedings

SN - 978-3-540-42150-4

SP - 1556

EP - 1559

BT - Transducers ’01 Eurosensors XV

PB - Springer

T2 - 11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV

Y2 - 10 June 2001 through 14 June 2001

ER -

Reducing the Effect of Parasitic Capacitance on MEMS Measurements

Abstract

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