Reducing the Effect of Parasitic Capacitance on MEMS Measurements

Pekka Rantakari, Jyrki Kiihamäki, Mika Koskenvuori, Tuomas Lamminmäki, Ilkka Tittonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The use of micromechanical resonant structures in RF electronics possesses often a problem caused by a very low signal amplitude. In order to alleviate the influence of parasitic capacitance we propose here the use of the differential amplifier and demonstrate its use here on the processed electrostatically driven resonators. The component used in verifying the use of differential amplifier is a clamped-clamped beam resonator with Q = 8000 and resonant frequency of f 0 = 12.3 MHz. A low-noise high input-impedance amplifier was used as a reference.
Original languageEnglish
Title of host publicationTransducers ’01 Eurosensors XV
PublisherSpringer
Pages1556-1559
ISBN (Electronic)978-3-642-59497-7
ISBN (Print)978-3-540-42150-4
DOIs
Publication statusPublished - 2001
MoE publication typeA4 Article in a conference publication
Event11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV - Munich, Germany
Duration: 10 Jun 200114 Jun 2001

Conference

Conference11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV
CountryGermany
CityMunich
Period10/06/0114/06/01

Fingerprint Dive into the research topics of 'Reducing the Effect of Parasitic Capacitance on MEMS Measurements'. Together they form a unique fingerprint.

  • Cite this

    Rantakari, P., Kiihamäki, J., Koskenvuori, M., Lamminmäki, T., & Tittonen, I. (2001). Reducing the Effect of Parasitic Capacitance on MEMS Measurements. In Transducers ’01 Eurosensors XV (pp. 1556-1559). Springer. https://doi.org/10.1007/978-3-642-59497-7_361