Reducing the Effect of Parasitic Capacitance on MEMS Measurements

Pekka Rantakari, Jyrki Kiihamäki, Mika Koskenvuori, Tuomas Lamminmäki, Ilkka Tittonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    The use of micromechanical resonant structures in RF electronics possesses often a problem caused by a very low signal amplitude. In order to alleviate the influence of parasitic capacitance we propose here the use of the differential amplifier and demonstrate its use here on the processed electrostatically driven resonators. The component used in verifying the use of differential amplifier is a clamped-clamped beam resonator with Q = 8000 and resonant frequency of f 0 = 12.3 MHz. A low-noise high input-impedance amplifier was used as a reference.
    Original languageEnglish
    Title of host publicationTransducers ’01 Eurosensors XV
    PublisherSpringer
    Pages1556-1559
    ISBN (Electronic)978-3-642-59497-7
    ISBN (Print)978-3-540-42150-4
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    Event11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV - Munich, Germany
    Duration: 10 Jun 200114 Jun 2001

    Conference

    Conference11th International Conference on Solid-State Sensors and Actuators, Transducers ’01 Eurosensors XV
    CountryGermany
    CityMunich
    Period10/06/0114/06/01

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