Abstract
A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.
| Original language | English |
|---|---|
| Pages (from-to) | 373-380 |
| Journal | Microelectronic Engineering |
| Volume | 37/38 |
| DOIs | |
| Publication status | Published - 1997 |
| MoE publication type | A1 Journal article-refereed |
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Reduction of molybdenum resistivity by a seed layer of Ti-W. / Franssila, Sami (Corresponding Author); Kattelus, Hannu; Nykänen, E.
In: Microelectronic Engineering, Vol. 37/38, 1997, p. 373-380.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Reduction of molybdenum resistivity by a seed layer of Ti-W
AU - Franssila, Sami
AU - Kattelus, Hannu
AU - Nykänen, E.
PY - 1997
Y1 - 1997
N2 - A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.
AB - A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.
U2 - 10.1016/S0167-9317(97)00135-4
DO - 10.1016/S0167-9317(97)00135-4
M3 - Article
VL - 37/38
SP - 373
EP - 380
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -