Reduction of molybdenum resistivity by a seed layer of Ti-W

Sami Franssila (Corresponding Author), Hannu Kattelus, E. Nykänen

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.

Original languageEnglish
Pages (from-to)373 - 380
Number of pages8
JournalMicroelectronic Engineering
Volume37/38
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Molybdenum
molybdenum
Seed
seeds
electrical resistivity
Wet etching
Thick films
Nucleation
Porosity
thick films
Oxidation
Scanning electron microscopy
grain size
etching
atomic force microscopy
nucleation
porosity
oxidation
scanning electron microscopy

Cite this

Franssila, Sami ; Kattelus, Hannu ; Nykänen, E. / Reduction of molybdenum resistivity by a seed layer of Ti-W. In: Microelectronic Engineering. 1997 ; Vol. 37/38. pp. 373 - 380.
@article{19a89d9d28eb4397aef51bebb6c416d4,
title = "Reduction of molybdenum resistivity by a seed layer of Ti-W",
abstract = "A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50{\%}. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.",
author = "Sami Franssila and Hannu Kattelus and E. Nyk{\"a}nen",
year = "1997",
doi = "10.1016/S0167-9317(97)00135-4",
language = "English",
volume = "37/38",
pages = "373 -- 380",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Reduction of molybdenum resistivity by a seed layer of Ti-W. / Franssila, Sami (Corresponding Author); Kattelus, Hannu; Nykänen, E.

In: Microelectronic Engineering, Vol. 37/38, 1997, p. 373 - 380.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Reduction of molybdenum resistivity by a seed layer of Ti-W

AU - Franssila, Sami

AU - Kattelus, Hannu

AU - Nykänen, E.

PY - 1997

Y1 - 1997

N2 - A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.

AB - A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ cm in the thickness range 25–800 nm while without the seed layer it is ca. 13 μΩ cm in the thickness range 300–800 nm, rising up to 18 μΩ cm for 25 mn thick film. TiW layer as thin as 2.5 nm is adequate for producing the effect. Molybdenum films both with and without the TiW nucleation layer have similar grain size and cubic structure with (110) as the strongest reflection. Strong crystallite clustering observed by AFM and FE-SEM is thought to be the reason for resistivity reduction. The TiW seed layer slows down the oxidation and wet etching rates of molybdenum, probably through surface area/porosity reduction.

U2 - 10.1016/S0167-9317(97)00135-4

DO - 10.1016/S0167-9317(97)00135-4

M3 - Article

VL - 37/38

SP - 373

EP - 380

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -