Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel; J.S. Reparaz; J. Gomis-Bresco; M.R. Wagner; J. Cuffe; B. Graczykowski; Andrey Shchepetov; H. Jiang; Mika Prunnila; Jouni Ahopelto; F. Alzina; C.M. Sotomayor Torres

doi:10.1063/1.4861796

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel, J.S. Reparaz, J. Gomis-Bresco, M.R. Wagner, J. Cuffe, B. Graczykowski, Andrey Shchepetov, H. Jiang, Mika Prunnila, Jouni Ahopelto, F. Alzina, C.M. Sotomayor Torres (Corresponding Author)

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Abstract

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 ìm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivitywas observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

Original language	English
Journal	APL Materials
Volume	2
Issue number	1
DOIs	https://doi.org/10.1063/1.4861796
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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Chávez-Ángel, E., Reparaz, J. S., Gomis-Bresco, J., Wagner, M. R., Cuffe, J., Graczykowski, B., Shchepetov, A., Jiang, H., Prunnila, M., Ahopelto, J., Alzina, F., & Sotomayor Torres, C. M. (2014). Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry. APL Materials, 2(1). https://doi.org/10.1063/1.4861796

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title = "Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry",

abstract = "We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 {\`i}m was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivitywas observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.",

author = "E. Ch{\'a}vez-{\'A}ngel and J.S. Reparaz and J. Gomis-Bresco and M.R. Wagner and J. Cuffe and B. Graczykowski and Andrey Shchepetov and H. Jiang and Mika Prunnila and Jouni Ahopelto and F. Alzina and {Sotomayor Torres}, C.M.",

year = "2014",

doi = "10.1063/1.4861796",

language = "English",

volume = "2",

journal = "APL Materials",

publisher = "American Institute of Physics (AIP)",

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T1 - Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

AU - Chávez-Ángel, E.

AU - Reparaz, J.S.

AU - Gomis-Bresco, J.

AU - Wagner, M.R.

AU - Cuffe, J.

AU - Graczykowski, B.

AU - Shchepetov, Andrey

AU - Jiang, H.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Alzina, F.

AU - Sotomayor Torres, C.M.

PY - 2014

Y1 - 2014

N2 - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 ìm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivitywas observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

AB - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 ìm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivitywas observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

U2 - 10.1063/1.4861796

DO - 10.1063/1.4861796

M3 - Article

VL - 2

JO - APL Materials

JF - APL Materials

IS - 1

ER -

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

Abstract

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