Refractive index behaviour of phosphorus-doped planar silica waveguides

Päivi Heimala, Jaakko Aarnio

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.
    Original languageEnglish
    Pages (from-to)733-739
    Number of pages7
    JournalJournal of Physics D: Applied Physics
    Volume25
    Issue number5
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon Dioxide
    Phosphorus
    phosphorus
    Refractive index
    Waveguides
    Silica
    refractivity
    silicon dioxide
    waveguides
    Quartz
    Silicon
    Annealing
    annealing
    quartz
    Low pressure chemical vapor deposition
    silicon
    Substrates
    Compressive stress
    homogeneity
    inhomogeneity

    Cite this

    @article{69a37f90491e46818c5c595220737f14,
    title = "Refractive index behaviour of phosphorus-doped planar silica waveguides",
    abstract = "The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.",
    author = "P{\"a}ivi Heimala and Jaakko Aarnio",
    note = "Project code: PUO1019",
    year = "1992",
    doi = "10.1088/0022-3727/25/5/001",
    language = "English",
    volume = "25",
    pages = "733--739",
    journal = "Journal of Physics D: Applied Physics",
    issn = "0022-3727",
    publisher = "Institute of Physics IOP",
    number = "5",

    }

    Refractive index behaviour of phosphorus-doped planar silica waveguides. / Heimala, Päivi; Aarnio, Jaakko.

    In: Journal of Physics D: Applied Physics, Vol. 25, No. 5, 1992, p. 733-739.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Refractive index behaviour of phosphorus-doped planar silica waveguides

    AU - Heimala, Päivi

    AU - Aarnio, Jaakko

    N1 - Project code: PUO1019

    PY - 1992

    Y1 - 1992

    N2 - The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.

    AB - The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.

    U2 - 10.1088/0022-3727/25/5/001

    DO - 10.1088/0022-3727/25/5/001

    M3 - Article

    VL - 25

    SP - 733

    EP - 739

    JO - Journal of Physics D: Applied Physics

    JF - Journal of Physics D: Applied Physics

    SN - 0022-3727

    IS - 5

    ER -