Refractive index behaviour of phosphorus-doped planar silica waveguides

Päivi Heimala, Jaakko Aarnio

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.
Original languageEnglish
Pages (from-to)733-739
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume25
Issue number5
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon Dioxide
Phosphorus
phosphorus
Refractive index
Waveguides
Silica
refractivity
silicon dioxide
waveguides
Quartz
Silicon
Annealing
annealing
quartz
Low pressure chemical vapor deposition
silicon
Substrates
Compressive stress
homogeneity
inhomogeneity

Cite this

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title = "Refractive index behaviour of phosphorus-doped planar silica waveguides",
abstract = "The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.",
author = "P{\"a}ivi Heimala and Jaakko Aarnio",
note = "Project code: PUO1019",
year = "1992",
doi = "10.1088/0022-3727/25/5/001",
language = "English",
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journal = "Journal of Physics D: Applied Physics",
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}

Refractive index behaviour of phosphorus-doped planar silica waveguides. / Heimala, Päivi; Aarnio, Jaakko.

In: Journal of Physics D: Applied Physics, Vol. 25, No. 5, 1992, p. 733-739.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Refractive index behaviour of phosphorus-doped planar silica waveguides

AU - Heimala, Päivi

AU - Aarnio, Jaakko

N1 - Project code: PUO1019

PY - 1992

Y1 - 1992

N2 - The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.

AB - The effect of annealing on the refractive index and the optical uniformity of undoped and phosphorus doped SiO2 films on silicon and quartz substrates is studied. The films are grown using low-pressure chemical vapour deposition. Vertical homogeneity of the refractive index is shown to be a relevant measure upon optimizing the annealing treatment for the film. High temperature annealing results in a decrease of the refractive index and an increase in the inhomogeneity of the refractive index in the vertical direction. This is due to the outdiffusion of phosphorus as well as the reduction of compressive stresses in the films. Stresses have also been considered to be the main reason for the refractive index difference of the order of 10-3 between films grown on silicon and on quartz substrates.

U2 - 10.1088/0022-3727/25/5/001

DO - 10.1088/0022-3727/25/5/001

M3 - Article

VL - 25

SP - 733

EP - 739

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

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