Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS

H. Xu; A. Rautiainen; V. Vuorinen; Elmeri  Österlund; Tommi Suni; Hannele Heikkinen; Philippe Monnoyer; Mervi Paulasto-Krockel

doi:10.1109/ESTC.2014.6962771

Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS

H. Xu
, A. Rautiainen
, V. Vuorinen
, Elmeri Österlund
, Tommi Suni
, Hannele Heikkinen
, Philippe Monnoyer
, Mervi Paulasto-Krockel

CO117 Sales team 3

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Wafer level Solid-Liquid Interdiffusion (SLID) bonding is used to encapsulate MEMS devices. The metals in SLID bonds can improve the reliability by absorbing mechanical and thermo-mechanical stresses. In this paper, the reliability of wafer level Au-Sn-(Ni) and Cu-Sn SLID bonds was systematically characterized and evaluated with shear/tensile tests, shear fatigue test, mixed flow gas (MFG) test, high temperature storage (HTS) test and thermal shock (TS) test. The failure modes and physical mechanisms were analyzed. Overall, the results demonstrated the high mechanical strength and reliability of SLID bonds. Utilizing the reliability results the design of seal bonds for MEMS encapsulation could be improved.

Original language	English
Title of host publication	Proceedings of the 5th Electronics System-integration Technology Conference (ESTC)
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Print)	978-1-4799-4026-4
DOIs	https://doi.org/10.1109/ESTC.2014.6962771
Publication status	Published - 2014
MoE publication type	A4 Article in a conference publication
Event	5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland Duration: 16 Sept 2014 → 18 Sept 2014 Conference number: 5th

Conference

Conference	5th Electronics System-Integration Technology Conference, ESTC 2014
Abbreviated title	ESTC 2014
Country/Territory	Finland
City	Helsinki
Period	16/09/14 → 18/09/14

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Xu, H., Rautiainen, A., Vuorinen, V., Österlund, E., Suni, T., Heikkinen, H., Monnoyer, P., & Paulasto-Krockel, M. (2014). Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS. In Proceedings of the 5th Electronics System-integration Technology Conference (ESTC) IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ESTC.2014.6962771

@inproceedings{ff04c55f52ea4bccb24b2602fa16c4ca,

title = "Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS",

abstract = "Wafer level Solid-Liquid Interdiffusion (SLID) bonding is used to encapsulate MEMS devices. The metals in SLID bonds can improve the reliability by absorbing mechanical and thermo-mechanical stresses. In this paper, the reliability of wafer level Au-Sn-(Ni) and Cu-Sn SLID bonds was systematically characterized and evaluated with shear/tensile tests, shear fatigue test, mixed flow gas (MFG) test, high temperature storage (HTS) test and thermal shock (TS) test. The failure modes and physical mechanisms were analyzed. Overall, the results demonstrated the high mechanical strength and reliability of SLID bonds. Utilizing the reliability results the design of seal bonds for MEMS encapsulation could be improved.",

author = "H. Xu and A. Rautiainen and V. Vuorinen and Elmeri {\"O}sterlund and Tommi Suni and Hannele Heikkinen and Philippe Monnoyer and Mervi Paulasto-Krockel",

year = "2014",

doi = "10.1109/ESTC.2014.6962771",

language = "English",

isbn = "978-1-4799-4026-4",

booktitle = "Proceedings of the 5th Electronics System-integration Technology Conference (ESTC)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "5th Electronics System-Integration Technology Conference, ESTC 2014, ESTC 2014 ; Conference date: 16-09-2014 Through 18-09-2014",

}

Xu, H, Rautiainen, A, Vuorinen, V, Österlund, E, Suni, T, Heikkinen, H, Monnoyer, P & Paulasto-Krockel, M 2014, Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS. in Proceedings of the 5th Electronics System-integration Technology Conference (ESTC). IEEE Institute of Electrical and Electronic Engineers, 5th Electronics System-Integration Technology Conference, ESTC 2014, Helsinki, Finland, 16/09/14. https://doi.org/10.1109/ESTC.2014.6962771

Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS. / Xu, H.; Rautiainen, A.; Vuorinen, V. et al.
Proceedings of the 5th Electronics System-integration Technology Conference (ESTC). IEEE Institute of Electrical and Electronic Engineers, 2014.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS

AU - Xu, H.

AU - Rautiainen, A.

AU - Vuorinen, V.

AU - Österlund, Elmeri

AU - Suni, Tommi

AU - Heikkinen, Hannele

AU - Monnoyer, Philippe

AU - Paulasto-Krockel, Mervi

N1 - Conference code: 5th

PY - 2014

Y1 - 2014

N2 - Wafer level Solid-Liquid Interdiffusion (SLID) bonding is used to encapsulate MEMS devices. The metals in SLID bonds can improve the reliability by absorbing mechanical and thermo-mechanical stresses. In this paper, the reliability of wafer level Au-Sn-(Ni) and Cu-Sn SLID bonds was systematically characterized and evaluated with shear/tensile tests, shear fatigue test, mixed flow gas (MFG) test, high temperature storage (HTS) test and thermal shock (TS) test. The failure modes and physical mechanisms were analyzed. Overall, the results demonstrated the high mechanical strength and reliability of SLID bonds. Utilizing the reliability results the design of seal bonds for MEMS encapsulation could be improved.

AB - Wafer level Solid-Liquid Interdiffusion (SLID) bonding is used to encapsulate MEMS devices. The metals in SLID bonds can improve the reliability by absorbing mechanical and thermo-mechanical stresses. In this paper, the reliability of wafer level Au-Sn-(Ni) and Cu-Sn SLID bonds was systematically characterized and evaluated with shear/tensile tests, shear fatigue test, mixed flow gas (MFG) test, high temperature storage (HTS) test and thermal shock (TS) test. The failure modes and physical mechanisms were analyzed. Overall, the results demonstrated the high mechanical strength and reliability of SLID bonds. Utilizing the reliability results the design of seal bonds for MEMS encapsulation could be improved.

U2 - 10.1109/ESTC.2014.6962771

DO - 10.1109/ESTC.2014.6962771

M3 - Conference article in proceedings

SN - 978-1-4799-4026-4

BT - Proceedings of the 5th Electronics System-integration Technology Conference (ESTC)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 5th Electronics System-Integration Technology Conference, ESTC 2014

Y2 - 16 September 2014 through 18 September 2014

ER -

Reliability Performance of Au-Sn and Cu-Sn Wafer Level SLID Bonds for MEMS

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