Response to comments on E. Huttunen-Saarivirta et al., “Kinetic properties of the passive film on copper in the presence of sulfate-reducing bacteria”

E. Huttunen-Saarivirta, P. Rajala, L. Carpén, J. Wang, F. Liu, E. Ghanbari, F. Mao, C. Dong, J. Yang, S. Sharifi-Asl, D. D. Macdonald (Corresponding Author)

    Research output: Contribution to journalReview ArticleScientificpeer-review

    Abstract

    The Comments by Martino et al.1 on the original manuscript2 criticize our interpretation of the existence and properties of the Cu2S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10°C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as “pure copper (P-Cu)” (nominally > 99.999%) and “oxygen-free phosphorous copper (OFP-Cu)”. P-Cu has been used in the majority of our work3–6 with only some of our later work employing OFP-Cu,2 a point that does not seem to be appreciated by Martino et al.1 On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years.7–11 This difference is of crucial importance in responding to the critique by Martino et al.1

    Original languageEnglish
    Pages (from-to)Y17-Y26
    JournalJournal of the Electrochemical Society
    Volume166
    Issue number10
    DOIs
    Publication statusPublished - 2019
    MoE publication typeA2 Review article in a scientific journal

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    Sulfates
    Copper
    Bacteria
    Kinetics
    Bearings (structural)
    Groundwater
    Oxygen

    Cite this

    @article{2fec39becd71488081652a7070e3128f,
    title = "Response to comments on E. Huttunen-Saarivirta et al., “Kinetic properties of the passive film on copper in the presence of sulfate-reducing bacteria”",
    abstract = "The Comments by Martino et al.1 on the original manuscript2 criticize our interpretation of the existence and properties of the Cu2S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10°C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as “pure copper (P-Cu)” (nominally > 99.999{\%}) and “oxygen-free phosphorous copper (OFP-Cu)”. P-Cu has been used in the majority of our work3–6 with only some of our later work employing OFP-Cu,2 a point that does not seem to be appreciated by Martino et al.1 On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years.7–11 This difference is of crucial importance in responding to the critique by Martino et al.1",
    author = "E. Huttunen-Saarivirta and P. Rajala and L. Carp{\'e}n and J. Wang and F. Liu and E. Ghanbari and F. Mao and C. Dong and J. Yang and S. Sharifi-Asl and Macdonald, {D. D.}",
    year = "2019",
    doi = "10.1149/2.0771910jes",
    language = "English",
    volume = "166",
    pages = "Y17--Y26",
    journal = "Journal of the Electrochemical Society",
    issn = "0013-4651",
    number = "10",

    }

    Response to comments on E. Huttunen-Saarivirta et al., “Kinetic properties of the passive film on copper in the presence of sulfate-reducing bacteria”. / Huttunen-Saarivirta, E.; Rajala, P.; Carpén, L.; Wang, J.; Liu, F.; Ghanbari, E.; Mao, F.; Dong, C.; Yang, J.; Sharifi-Asl, S.; Macdonald, D. D. (Corresponding Author).

    In: Journal of the Electrochemical Society, Vol. 166, No. 10, 2019, p. Y17-Y26.

    Research output: Contribution to journalReview ArticleScientificpeer-review

    TY - JOUR

    T1 - Response to comments on E. Huttunen-Saarivirta et al., “Kinetic properties of the passive film on copper in the presence of sulfate-reducing bacteria”

    AU - Huttunen-Saarivirta, E.

    AU - Rajala, P.

    AU - Carpén, L.

    AU - Wang, J.

    AU - Liu, F.

    AU - Ghanbari, E.

    AU - Mao, F.

    AU - Dong, C.

    AU - Yang, J.

    AU - Sharifi-Asl, S.

    AU - Macdonald, D. D.

    PY - 2019

    Y1 - 2019

    N2 - The Comments by Martino et al.1 on the original manuscript2 criticize our interpretation of the existence and properties of the Cu2S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10°C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as “pure copper (P-Cu)” (nominally > 99.999%) and “oxygen-free phosphorous copper (OFP-Cu)”. P-Cu has been used in the majority of our work3–6 with only some of our later work employing OFP-Cu,2 a point that does not seem to be appreciated by Martino et al.1 On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years.7–11 This difference is of crucial importance in responding to the critique by Martino et al.1

    AB - The Comments by Martino et al.1 on the original manuscript2 criticize our interpretation of the existence and properties of the Cu2S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10°C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as “pure copper (P-Cu)” (nominally > 99.999%) and “oxygen-free phosphorous copper (OFP-Cu)”. P-Cu has been used in the majority of our work3–6 with only some of our later work employing OFP-Cu,2 a point that does not seem to be appreciated by Martino et al.1 On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years.7–11 This difference is of crucial importance in responding to the critique by Martino et al.1

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