Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

P. Luukka; J. Härkönen; E. Tuovinen; Eija Tuominen; K. Lassila-Perini; P. Mehtälä; S. Nummela; J. Nysten; D. Ungaro; A. Zibellini; P. Laitinen; I. Riihimäki; A. Virtanen; A. Furgeri; F. Hartmann

doi:10.1016/j.nima.2004.05.058

Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

P. Luukka (Corresponding Author), J. Härkönen, E. Tuovinen, Eija Tuominen, K. Lassila-Perini, P. Mehtälä, S. Nummela, J. Nysten, D. Ungaro, A. Zibellini, P. Laitinen, I. Riihimäki, A. Virtanen, A. Furgeri, F. Hartmann

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Abstract

We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.

Original language	English
Pages (from-to)	117-121
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	530
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2004.05.058
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

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Luukka, P., Härkönen, J., Tuovinen, E., Tuominen, E., Lassila-Perini, K., Mehtälä, P., Nummela, S., Nysten, J., Ungaro, D., Zibellini, A., Laitinen, P., Riihimäki, I., Virtanen, A., Furgeri, A., & Hartmann, F. (2004). Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 530(1-2), 117-121. https://doi.org/10.1016/j.nima.2004.05.058

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title = "Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon",

abstract = "We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.",

author = "P. Luukka and J. H{\"a}rk{\"o}nen and E. Tuovinen and Eija Tuominen and K. Lassila-Perini and P. Meht{\"a}l{\"a} and S. Nummela and J. Nysten and D. Ungaro and A. Zibellini and P. Laitinen and I. Riihim{\"a}ki and A. Virtanen and A. Furgeri and F. Hartmann",

year = "2004",

doi = "10.1016/j.nima.2004.05.058",

language = "English",

volume = "530",

pages = "117--121",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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Luukka, P, Härkönen, J, Tuovinen, E, Tuominen, E, Lassila-Perini, K, Mehtälä, P, Nummela, S, Nysten, J, Ungaro, D, Zibellini, A, Laitinen, P, Riihimäki, I, Virtanen, A, Furgeri, A & Hartmann, F 2004, 'Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 530, no. 1-2, pp. 117-121. https://doi.org/10.1016/j.nima.2004.05.058

Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon. / Luukka, P. (Corresponding Author); Härkönen, J.; Tuovinen, E. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 530, No. 1-2, 2004, p. 117-121.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

AU - Luukka, P.

AU - Härkönen, J.

AU - Tuovinen, E.

AU - Tuominen, Eija

AU - Lassila-Perini, K.

AU - Mehtälä, P.

AU - Nummela, S.

AU - Nysten, J.

AU - Ungaro, D.

AU - Zibellini, A.

AU - Laitinen, P.

AU - Riihimäki, I.

AU - Virtanen, A.

AU - Furgeri, A.

AU - Hartmann, F.

PY - 2004

Y1 - 2004

N2 - We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.

AB - We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.

U2 - 10.1016/j.nima.2004.05.058

DO - 10.1016/j.nima.2004.05.058

M3 - Article

SN - 0168-9002

VL - 530

SP - 117

EP - 121

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-2

ER -

Luukka P, Härkönen J, Tuovinen E, Tuominen E, Lassila-Perini K, Mehtälä P et al. Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2004;530(1-2):117-121. doi: 10.1016/j.nima.2004.05.058

Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

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