Abstract
Reverse-offset printing (ROP) is a novel printing technique capable of forming electronics-industry-relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen-plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal-oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface-energy measurements and Fourier transform infrared spectra of the ink during drying. Thin-film transistors (TFTs) fabricated using a roll-to-plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF-ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide-type substrate, respectively. TFTs on the flexible substrate with also the S/D-contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll-to-roll-compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal-oxide circuits as required by flexible high-resolution sensor arrays and displays.
| Original language | English |
|---|---|
| Article number | 1900272 |
| Journal | Advanced Electronic Materials |
| Volume | 5 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2019 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- flexible electronics
- metal oxides
- printed transistors
- reverse offset printing
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Reverse-Offset Printing of Metal-Nitrate-Based Metal Oxide Semiconductor Ink for Flexible TFTs. / Leppäniemi, Jaakko (Corresponding Author); Sneck, Asko; Kusaka, Yasuyuki; Fukuda, Nobuko; Alastalo, Ari.
In: Advanced Electronic Materials, Vol. 5, No. 8, 1900272, 2019.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Reverse-Offset Printing of Metal-Nitrate-Based Metal Oxide Semiconductor Ink for Flexible TFTs
AU - Leppäniemi, Jaakko
AU - Sneck, Asko
AU - Kusaka, Yasuyuki
AU - Fukuda, Nobuko
AU - Alastalo, Ari
PY - 2019
Y1 - 2019
N2 - Reverse-offset printing (ROP) is a novel printing technique capable of forming electronics-industry-relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen-plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal-oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface-energy measurements and Fourier transform infrared spectra of the ink during drying. Thin-film transistors (TFTs) fabricated using a roll-to-plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF-ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide-type substrate, respectively. TFTs on the flexible substrate with also the S/D-contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll-to-roll-compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal-oxide circuits as required by flexible high-resolution sensor arrays and displays.
AB - Reverse-offset printing (ROP) is a novel printing technique capable of forming electronics-industry-relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen-plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal-oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface-energy measurements and Fourier transform infrared spectra of the ink during drying. Thin-film transistors (TFTs) fabricated using a roll-to-plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF-ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide-type substrate, respectively. TFTs on the flexible substrate with also the S/D-contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll-to-roll-compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal-oxide circuits as required by flexible high-resolution sensor arrays and displays.
KW - flexible electronics
KW - metal oxides
KW - printed transistors
KW - reverse offset printing
UR - http://www.scopus.com/inward/record.url?scp=85068405617&partnerID=8YFLogxK
U2 - 10.1002/aelm.201900272
DO - 10.1002/aelm.201900272
M3 - Article
AN - SCOPUS:85068405617
VL - 5
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 8
M1 - 1900272
ER -