Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Yasuyuki Kusaka (Corresponding Author), Naoki Shirakawa, Shintaro Ogura, Jaakko Leppäniemi, Asko Sneck, Ari Alastalo, Hirobumi Ushijima, Nobuko Fukuda

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

Original languageEnglish
Pages (from-to)24339-24343
Number of pages5
JournalACS applied materials & interfaces
Volume10
Issue number29
DOIs
Publication statusPublished - 25 Jul 2018
MoE publication typeNot Eligible

Fingerprint

Offset printing
Ink
Metals
Plasmas
Fabrication
Polydimethylsiloxane
Metal complexes
Wetting
Printing
Hydrogen
Drying
Solubility
Temperature
acetyl acetonate
baysilon

Keywords

  • hydrogen plasma
  • metal complex
  • metal oxide
  • Printing
  • solution process
  • transistor

Cite this

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title = "Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication",
abstract = "The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.",
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Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication. / Kusaka, Yasuyuki (Corresponding Author); Shirakawa, Naoki; Ogura, Shintaro; Leppäniemi, Jaakko; Sneck, Asko; Alastalo, Ari; Ushijima, Hirobumi; Fukuda, Nobuko.

In: ACS applied materials & interfaces, Vol. 10, No. 29, 25.07.2018, p. 24339-24343.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kusaka, Yasuyuki

AU - Shirakawa, Naoki

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