Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Yasuyuki Kusaka (Corresponding Author), Naoki Shirakawa, Shintaro Ogura, Jaakko Leppäniemi, Asko Sneck, Ari Alastalo, Hirobumi Ushijima, Nobuko Fukuda

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

    Original languageEnglish
    Pages (from-to)24339-24343
    Number of pages5
    JournalACS Applied Materials & Interfaces
    Volume10
    Issue number29
    DOIs
    Publication statusPublished - 25 Jul 2018
    MoE publication typeNot Eligible

    Keywords

    • hydrogen plasma
    • metal complex
    • metal oxide
    • Printing
    • solution process
    • transistor
    • OtaNano

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