Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Yasuyuki Kusaka; Naoki Shirakawa; Shintaro Ogura; Jaakko Leppäniemi; Asko Sneck; Ari Alastalo; Hirobumi Ushijima; Nobuko Fukuda

doi:10.1021/acsami.8b07465

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Yasuyuki Kusaka (Corresponding Author), Naoki Shirakawa, Shintaro Ogura, Jaakko Leppäniemi, Asko Sneck, Ari Alastalo, Hirobumi Ushijima, Nobuko Fukuda

National Institute of Advanced Industrial Science and Technology (AIST)

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Abstract

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO_x and a plasma-protecting layer of ZrO_x situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm²/(V s) is demonstrated.

Original language	English
Pages (from-to)	24339-24343
Number of pages	5
Journal	ACS Applied Materials & Interfaces
Volume	10
Issue number	29
DOIs	https://doi.org/10.1021/acsami.8b07465
Publication status	Published - 25 Jul 2018
MoE publication type	Not Eligible

Keywords

hydrogen plasma
metal complex
metal oxide
Printing
solution process
transistor
OtaNano

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10.1021/acsami.8b07465

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title = "Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication",

abstract = "The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.",

keywords = "hydrogen plasma, metal complex, metal oxide, Printing, solution process, transistor, OtaNano",

author = "Yasuyuki Kusaka and Naoki Shirakawa and Shintaro Ogura and Jaakko Lepp{\"a}niemi and Asko Sneck and Ari Alastalo and Hirobumi Ushijima and Nobuko Fukuda",

year = "2018",

month = jul,

day = "25",

doi = "10.1021/acsami.8b07465",

language = "English",

volume = "10",

pages = "24339--24343",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society ACS",

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}

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication. / Kusaka, Yasuyuki (Corresponding Author); Shirakawa, Naoki; Ogura, Shintaro et al.
In: ACS Applied Materials & Interfaces, Vol. 10, No. 29, 25.07.2018, p. 24339-24343.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

AU - Kusaka, Yasuyuki

AU - Shirakawa, Naoki

AU - Ogura, Shintaro

AU - Leppäniemi, Jaakko

AU - Sneck, Asko

AU - Alastalo, Ari

AU - Ushijima, Hirobumi

AU - Fukuda, Nobuko

PY - 2018/7/25

Y1 - 2018/7/25

N2 - The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

AB - The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

KW - hydrogen plasma

KW - metal complex

KW - metal oxide

KW - Printing

KW - solution process

KW - transistor

KW - OtaNano

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EP - 24343

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

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ER -

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

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Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

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