Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Yasuyuki Kusaka; Naoki Shirakawa; Shintaro Ogura; Jaakko Leppäniemi; Asko Sneck; Ari Alastalo; Hirobumi Ushijima; Nobuko Fukuda

doi:10.1021/acsami.8b07465

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Yasuyuki Kusaka^*
, Naoki Shirakawa
, Shintaro Ogura
, Jaakko Leppäniemi
, Asko Sneck
, Ari Alastalo
, Hirobumi Ushijima
, Nobuko Fukuda

^*Corresponding author for this work

National Institute of Advanced Industrial Science and Technology (AIST)

Research output: Contribution to journal › Article › Scientific › peer-review

25 Citations (Scopus)

Abstract

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO_x and a plasma-protecting layer of ZrO_x situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm²/(V s) is demonstrated.

Original language	English
Pages (from-to)	24339-24343
Journal	ACS Applied Materials & Interfaces
Volume	10
Issue number	29
DOIs	https://doi.org/10.1021/acsami.8b07465
Publication status	Published - 25 Jul 2018
MoE publication type	A1 Journal article-refereed

Funding

Y.K. expresses thanks for the JSPS KAKENHI Grant-in-Aid for Young Scientists (B) 17K18410 and the Grant-in-Aid for Scientific Research (S) 16H06382. J.L., A.S. and A.A. are supported by the Academy of Finland under Project ROXI Grant No. 305450.

Keywords

hydrogen plasma
metal complex
metal oxide
Printing
solution process
transistor
OtaNano

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10.1021/acsami.8b07465

Cite this

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title = "Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication",

abstract = "The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.",

keywords = "hydrogen plasma, metal complex, metal oxide, Printing, solution process, transistor, OtaNano",

author = "Yasuyuki Kusaka and Naoki Shirakawa and Shintaro Ogura and Jaakko Lepp{\"a}niemi and Asko Sneck and Ari Alastalo and Hirobumi Ushijima and Nobuko Fukuda",

note = "XPS and UPS measurements were performed at AIST Nano-Processing Facility (AIST-NPF).",

year = "2018",

month = jul,

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doi = "10.1021/acsami.8b07465",

language = "English",

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journal = "ACS Applied Materials \& Interfaces",

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T1 - Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

AU - Kusaka, Yasuyuki

AU - Shirakawa, Naoki

AU - Ogura, Shintaro

AU - Leppäniemi, Jaakko

AU - Sneck, Asko

AU - Alastalo, Ari

AU - Ushijima, Hirobumi

AU - Fukuda, Nobuko

N1 - XPS and UPS measurements were performed at AIST Nano-Processing Facility (AIST-NPF).

PY - 2018/7/25

Y1 - 2018/7/25

N2 - The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

AB - The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

KW - hydrogen plasma

KW - metal complex

KW - metal oxide

KW - Printing

KW - solution process

KW - transistor

KW - OtaNano

UR - https://www.scopus.com/pages/publications/85049670615

U2 - 10.1021/acsami.8b07465

DO - 10.1021/acsami.8b07465

M3 - Article

AN - SCOPUS:85049670615

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VL - 10

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EP - 24343

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 29

ER -

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Abstract

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Cite this

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Abstract

Funding

Keywords

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Fingerprint

Equipment

OtaNano

Cite this