Review Article: Recommended reading list of early publications on atomic layer deposition: Outcome of the "Virtual Project on the History of ALD"

Esko Ahvenniemi, Andrew Akbashev, Saima Ali, Mikhael Bechelany, Maria Berdova, Stefan Boyadjiev, David Cameron, Rong Chen, Mikhail Chubarov, Veronique Cremers, Anjana Devi, Viktor Drozd, Liliya Elnikova, Gloria Gottardi, Kestutis Grigoras, Dennis Hausmann, Cheol Seong Hwang, Shih-Hui Jen, Tanja Kallio, Jaana KanervoIvan Khmelnitskiy, Do Han Kim, Lev Klibanov, Yury Koshtyal, Outi Krause, Jakob Kuhs, Irina Kärkkänen, Marja-Leena Kääriäinen, Tommi Kääriäinen, Luca Lamagna, Adam Lapicki, Markku Leskelä, Harri Lipsanen, Jussi Lyytinen, Anatoly Malkov, Anatoly Malygin, Abdelkader Mennad, Christian Militzer, Jyrki Molarius, Małgorzata Norek, Çağla Özgit-Akgün, Mikhail Panov, Henrik Pedersen, Fabien Piallat, Georgi Popov, Riikka Puurunen, Geert Rampelberg, Robin H.A. Ras, Erwan Rauwel, Fred Roozeboom, Timo Sajavaara, Hossein Salami, Hele Savin, Nathanaelle Schneider, Thomas E. Seidel, Jonas Sundqvist, Dmitry Suyatin, Tobias Törndahl, J. Ruud van Ommen, Claudia Wiemer, Oili Ylivaara, Oksana Yurkevich

    Research output: Contribution to journalReview Articlepeer-review

    67 Citations (Scopus)

    Abstract

    Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
    Original languageEnglish
    Article number 010801
    Number of pages13
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume35
    Issue number1
    DOIs
    Publication statusPublished - 1 Jan 2017
    MoE publication typeA2 Review article in a scientific journal

    Funding

    R.L.P. acknowledges partial funding of the VPHA coordination activities by the Finnish Centre of Excellence in Atomic Layer Deposition by Academy of Finland. This article is partly based upon work from COST Action MP1402 ‘Hooking together European research in atomic layer deposition (HERALD)’, supported by COST (European Cooperation in Science and Technology).

    Keywords

    • Atomic layer
    • deposition
    • Epitaxy
    • Thin films
    • Patents
    • Silica

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