Abstract
| Original language | English |
|---|---|
| Article number | 010801 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 2017 |
| MoE publication type | A2 Review article in a scientific journal |
Fingerprint
Keywords
- Atomic layer
- deposition
- Epitaxy
- Thin films
- Patents
- Silica
Cite this
}
Review Article: Recommended reading list of early publications on atomic layer deposition : Outcome of the "Virtual Project on the History of ALD". / Ahvenniemi, Esko; Akbashev, Andrew; Ali, Saima; Bechelany, Mikhael; Berdova, Maria; Boyadjiev, Stefan; Cameron, David; Chen, Rong; Chubarov, Mikhail; Cremers, Veronique; Devi, Anjana; Drozd, Viktor; Elnikova, Liliya ; Gottardi, Gloria; Grigoras, Kestutis; Hausmann, Dennis; Hwang, Cheol Seong; Jen, Shih-Hui; Kallio, Tanja; Kanervo, Jaana; Khmelnitskiy, Ivan; Kim, Do Han; Klibanov, Lev; Koshtyal, Yury; Krause, Outi; Kuhs, Jakob; Kärkkänen, Irina ; Kääriäinen, Marja-Leena; Kääriäinen, Tommi; Lamagna, Luca; Lapicki, Adam; Leskelä, Markku; Lipsanen, Harri; Lyytinen, Jussi; Malkov, Anatoly; Malygin, Anatoly; Mennad, Abdelkader; Militzer, Christian ; Molarius, Jyrki; Norek, Małgorzata; Özgit-Akgün, Çağla; Panov, Mikhail; Pedersen, Henrik; Piallat, Fabien; Popov, Georgi; Puurunen, Riikka; Rampelberg, Geert; Ras, Robin H.A.; Rauwel, Erwan; Roozeboom, Fred; Sajavaara, Timo; Salami, Hossein; Savin, Hele; Schneider, Nathanaelle; Seidel, Thomas E.; Sundqvist, Jonas; Suyatin, Dmitry; Törndahl, Tobias; van Ommen, J. Ruud; Wiemer, Claudia; Ylivaara, Oili; Yurkevich, Oksana.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 35, No. 1, 010801, 01.01.2017.Research output: Contribution to journal › Review Article › Scientific › peer-review
TY - JOUR
T1 - Review Article: Recommended reading list of early publications on atomic layer deposition
T2 - Outcome of the "Virtual Project on the History of ALD"
AU - Ahvenniemi, Esko
AU - Akbashev, Andrew
AU - Ali, Saima
AU - Bechelany, Mikhael
AU - Berdova, Maria
AU - Boyadjiev, Stefan
AU - Cameron, David
AU - Chen, Rong
AU - Chubarov, Mikhail
AU - Cremers, Veronique
AU - Devi, Anjana
AU - Drozd, Viktor
AU - Elnikova, Liliya
AU - Gottardi, Gloria
AU - Grigoras, Kestutis
AU - Hausmann, Dennis
AU - Hwang, Cheol Seong
AU - Jen, Shih-Hui
AU - Kallio, Tanja
AU - Kanervo, Jaana
AU - Khmelnitskiy, Ivan
AU - Kim, Do Han
AU - Klibanov, Lev
AU - Koshtyal, Yury
AU - Krause, Outi
AU - Kuhs, Jakob
AU - Kärkkänen, Irina
AU - Kääriäinen, Marja-Leena
AU - Kääriäinen, Tommi
AU - Lamagna, Luca
AU - Lapicki, Adam
AU - Leskelä, Markku
AU - Lipsanen, Harri
AU - Lyytinen, Jussi
AU - Malkov, Anatoly
AU - Malygin, Anatoly
AU - Mennad, Abdelkader
AU - Militzer, Christian
AU - Molarius, Jyrki
AU - Norek, Małgorzata
AU - Özgit-Akgün, Çağla
AU - Panov, Mikhail
AU - Pedersen, Henrik
AU - Piallat, Fabien
AU - Popov, Georgi
AU - Puurunen, Riikka
AU - Rampelberg, Geert
AU - Ras, Robin H.A.
AU - Rauwel, Erwan
AU - Roozeboom, Fred
AU - Sajavaara, Timo
AU - Salami, Hossein
AU - Savin, Hele
AU - Schneider, Nathanaelle
AU - Seidel, Thomas E.
AU - Sundqvist, Jonas
AU - Suyatin, Dmitry
AU - Törndahl, Tobias
AU - van Ommen, J. Ruud
AU - Wiemer, Claudia
AU - Ylivaara, Oili
AU - Yurkevich, Oksana
N1 - CA2: BA1401 CA2: BA1403 Project code: 102086 PGN: 13 AU2: Grigoras, Kestutis AU2: Puurunen, Riikka AU2: Ylivaara, Oili
PY - 2017/1/1
Y1 - 2017/1/1
N2 - Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
AB - Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
KW - Atomic layer
KW - deposition
KW - Epitaxy
KW - Thin films
KW - Patents
KW - Silica
UR - http://www.scopus.com/inward/record.url?scp=85007005785&partnerID=8YFLogxK
U2 - 10.1116/1.4971389
DO - 10.1116/1.4971389
M3 - Review Article
VL - 35
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SN - 0734-2101
IS - 1
M1 - 010801
ER -