RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers

R. Malmqvist, Pekka Rantakari, C. Samuelsson, Markku Lahti, S. Cheng, Jan Saijets, Tauno Vähä-Heikkilä, A. Rydberg, Jussi Varis

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

12 Citations (Scopus)

Abstract

In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.
Original languageEnglish
Title of host publicationProceedings of the International Semiconductor Conference, 2009 - CAS 2009
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages303-306
ISBN (Print)978-1-4244-4413-7
DOIs
Publication statusPublished - 2009
MoE publication typeA4 Article in a conference publication
EventInternational Semiconductor Conference 2009 - CAS 2009 - Sinaia, Romania
Duration: 12 Oct 200914 Oct 2009

Conference

ConferenceInternational Semiconductor Conference 2009 - CAS 2009
CountryRomania
CitySinaia
Period12/10/0914/10/09

Fingerprint

Microwave amplifiers
Low noise amplifiers
MEMS
Tuning
Millimeter waves
Microwaves
Switches

Keywords

  • RF MEMS
  • Ka-band
  • impedance matching network
  • low noise amplifier

Cite this

Malmqvist, R., Rantakari, P., Samuelsson, C., Lahti, M., Cheng, S., Saijets, J., ... Varis, J. (2009). RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. In Proceedings of the International Semiconductor Conference, 2009 - CAS 2009 (pp. 303-306). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/SMICND.2009.5336539
Malmqvist, R. ; Rantakari, Pekka ; Samuelsson, C. ; Lahti, Markku ; Cheng, S. ; Saijets, Jan ; Vähä-Heikkilä, Tauno ; Rydberg, A. ; Varis, Jussi. / RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. Proceedings of the International Semiconductor Conference, 2009 - CAS 2009. Institute of Electrical and Electronic Engineers IEEE, 2009. pp. 303-306
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title = "RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers",
abstract = "In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13{\%}) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.",
keywords = "RF MEMS, Ka-band, impedance matching network, low noise amplifier",
author = "R. Malmqvist and Pekka Rantakari and C. Samuelsson and Markku Lahti and S. Cheng and Jan Saijets and Tauno V{\"a}h{\"a}-Heikkil{\"a} and A. Rydberg and Jussi Varis",
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language = "English",
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Malmqvist, R, Rantakari, P, Samuelsson, C, Lahti, M, Cheng, S, Saijets, J, Vähä-Heikkilä, T, Rydberg, A & Varis, J 2009, RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. in Proceedings of the International Semiconductor Conference, 2009 - CAS 2009. Institute of Electrical and Electronic Engineers IEEE, pp. 303-306, International Semiconductor Conference 2009 - CAS 2009, Sinaia, Romania, 12/10/09. https://doi.org/10.1109/SMICND.2009.5336539

RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. / Malmqvist, R.; Rantakari, Pekka; Samuelsson, C.; Lahti, Markku; Cheng, S.; Saijets, Jan; Vähä-Heikkilä, Tauno; Rydberg, A.; Varis, Jussi.

Proceedings of the International Semiconductor Conference, 2009 - CAS 2009. Institute of Electrical and Electronic Engineers IEEE, 2009. p. 303-306.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Rantakari, Pekka

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N2 - In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.

AB - In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.

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Malmqvist R, Rantakari P, Samuelsson C, Lahti M, Cheng S, Saijets J et al. RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. In Proceedings of the International Semiconductor Conference, 2009 - CAS 2009. Institute of Electrical and Electronic Engineers IEEE. 2009. p. 303-306 https://doi.org/10.1109/SMICND.2009.5336539