RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers

R. Malmqvist; Pekka Rantakari; C. Samuelsson; Markku Lahti; S. Cheng; Jan Saijets; Tauno Vähä-Heikkilä; A. Rydberg; Jussi Varis

doi:10.1109/SMICND.2009.5336539

RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers

R. Malmqvist, Pekka Rantakari, C. Samuelsson, Markku Lahti, S. Cheng, Jan Saijets, Tauno Vähä-Heikkilä, A. Rydberg, Jussi Varis

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

17 Citations (Scopus)

Abstract

In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.

Original language	English
Title of host publication	2009 International Semiconductor Conference (CAS 2009)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	303-306
ISBN (Print)	978-1-4244-4413-7
DOIs	https://doi.org/10.1109/SMICND.2009.5336539
Publication status	Published - 2009
MoE publication type	A4 Article in a conference publication
Event	International Semiconductor Conference 2009 - CAS 2009 - Sinaia, Romania Duration: 12 Oct 2009 → 14 Oct 2009

Conference

Conference	International Semiconductor Conference 2009 - CAS 2009
Country/Territory	Romania
City	Sinaia
Period	12/10/09 → 14/10/09

Keywords

RF MEMS
Ka-band
impedance matching network
low noise amplifier

Access to Document

10.1109/SMICND.2009.5336539

https://publications.vtt.fi/julkaisut/muut/2009/Malmqvist_et_al_CAS2009_303_306.pdf

Cite this

Malmqvist, R., Rantakari, P., Samuelsson, C., Lahti, M., Cheng, S., Saijets, J., Vähä-Heikkilä, T., Rydberg, A., & Varis, J. (2009). RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. In 2009 International Semiconductor Conference (CAS 2009) (pp. 303-306). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/SMICND.2009.5336539

@inproceedings{d44d24914c144de494bfd40be6ff124c,

title = "RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers",

abstract = "In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.",

keywords = "RF MEMS, Ka-band, impedance matching network, low noise amplifier",

author = "R. Malmqvist and Pekka Rantakari and C. Samuelsson and Markku Lahti and S. Cheng and Jan Saijets and Tauno V{\"a}h{\"a}-Heikkil{\"a} and A. Rydberg and Jussi Varis",

year = "2009",

doi = "10.1109/SMICND.2009.5336539",

language = "English",

isbn = "978-1-4244-4413-7",

pages = "303--306",

booktitle = "2009 International Semiconductor Conference (CAS 2009)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "International Semiconductor Conference 2009 - CAS 2009 ; Conference date: 12-10-2009 Through 14-10-2009",

}

Malmqvist, R, Rantakari, P, Samuelsson, C, Lahti, M, Cheng, S, Saijets, J , Vähä-Heikkilä, T, Rydberg, A & Varis, J 2009, RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. in 2009 International Semiconductor Conference (CAS 2009). IEEE Institute of Electrical and Electronic Engineers, pp. 303-306, International Semiconductor Conference 2009 - CAS 2009, Sinaia, Romania, 12/10/09. https://doi.org/10.1109/SMICND.2009.5336539

RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers. / Malmqvist, R.; Rantakari, Pekka; Samuelsson, C. et al.
2009 International Semiconductor Conference (CAS 2009). IEEE Institute of Electrical and Electronic Engineers, 2009. p. 303-306.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers

AU - Malmqvist, R.

AU - Rantakari, Pekka

AU - Samuelsson, C.

AU - Lahti, Markku

AU - Cheng, S.

AU - Saijets, Jan

AU - Vähä-Heikkilä, Tauno

AU - Rydberg, A.

AU - Varis, Jussi

PY - 2009

Y1 - 2009

N2 - In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.

AB - In this paper, we present different types of reconfigurable RF MEMS based matching networks intended for frequency-agile (multi-band) LNAs. Measured results of 2-bits matching networks show a centre frequency tuning range of 2-3 GHz (10-13%) around 20 GHz and 1.5-2.0 dB of minimum losses. Simulated tunable LNA results based on measured data of the RF MEMS matching networks show the possibilities of achieving similar high gain, good matching and low NF over the whole tuning range. The results demonstrate the potential of using RF MEMS switches for the realization of tunable LNAs at microwave and millimetre-wave frequencies.

KW - RF MEMS

KW - Ka-band

KW - impedance matching network

KW - low noise amplifier

U2 - 10.1109/SMICND.2009.5336539

DO - 10.1109/SMICND.2009.5336539

M3 - Conference article in proceedings

SN - 978-1-4244-4413-7

SP - 303

EP - 306

BT - 2009 International Semiconductor Conference (CAS 2009)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - International Semiconductor Conference 2009 - CAS 2009

Y2 - 12 October 2009 through 14 October 2009

ER -

RF MEMS Based Impedance Matching Networks for Tunable Multi-Band Microwave Low Noise Amplifiers

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this