Abstract
In this paper we present the main scope and initial
results obtained within a pan-European research activity
aiming at a successful monolithic integration of
innovative RF MEMS switches into a standard GaAs MMIC
process technology. Measured results of a fabricated
ohmic contact type of RF MEMS switch developed by the
OMMIC foundry show promising results e.g. in terms of low
RF losses (0.2-0.4 dB is obtained from DC up to 30 GHz).
The experimentally verified GaAs based RF MEMS switch has
further been used to design low-loss MMIC building blocks
such as switching, matching and phase shifting circuits
for various RF applications up to 40 GHz. (12 refs.)
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | European Microwave Integrated Circuits Conference, EuMIC 2009 |
| Place of Publication | Piscataway, NJ, USA |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 363-366 |
| ISBN (Print) | 978-1-4244-4749-7 |
| Publication status | Published - 2009 |
| MoE publication type | A4 Article in a conference publication |
| Event | European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy Duration: 28 Sept 2009 → 29 Sept 2009 |
Conference
| Conference | European Microwave Integrated Circuits Conference, EuMIC 2009 |
|---|---|
| Abbreviated title | EuMIC 2009 |
| Country/Territory | Italy |
| City | Rome |
| Period | 28/09/09 → 29/09/09 |