RF-model extraction for passive components on MCM-Si materials

Hannu Ronkainen; Tarja Riihisaari; Hannu Kattelus

doi:10.1238/Physica.Topical.079a00279

RF-model extraction for passive components on MCM-Si materials

Hannu Ronkainen
, Tarja Riihisaari
, Hannu Kattelus

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Silicon based Multi Chip Module (MCM-Si) technology offers high precision and high packing density compared with traditional PCB and ceramic thick film hybrid technologies. When used in RF-equipment, MCM-Si's suffer from severe signal loading and signal coupling via the substrate. In this paper modeling of passive elements on MCM's is discussed. Simple equivalent circuits and parameter extraction methods are presented.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Physica Scripta
Volume	T79
DOIs	https://doi.org/10.1238/Physica.Topical.079a00279
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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10.1238/Physica.Topical.079a00279

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@article{5047df9bd5c6473e88b2081a83a05d44,

title = "RF-model extraction for passive components on MCM-Si materials",

abstract = "Silicon based Multi Chip Module (MCM-Si) technology offers high precision and high packing density compared with traditional PCB and ceramic thick film hybrid technologies. When used in RF-equipment, MCM-Si's suffer from severe signal loading and signal coupling via the substrate. In this paper modeling of passive elements on MCM's is discussed. Simple equivalent circuits and parameter extraction methods are presented.",

author = "Hannu Ronkainen and Tarja Riihisaari and Hannu Kattelus",

year = "1999",

doi = "10.1238/Physica.Topical.079a00279",

language = "English",

volume = "T79",

pages = "279--282",

journal = "Physica Scripta",

issn = "0281-1847",

publisher = "Institute of Physics IOP",

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TY - JOUR

T1 - RF-model extraction for passive components on MCM-Si materials

AU - Ronkainen, Hannu

AU - Riihisaari, Tarja

AU - Kattelus, Hannu

PY - 1999

Y1 - 1999

N2 - Silicon based Multi Chip Module (MCM-Si) technology offers high precision and high packing density compared with traditional PCB and ceramic thick film hybrid technologies. When used in RF-equipment, MCM-Si's suffer from severe signal loading and signal coupling via the substrate. In this paper modeling of passive elements on MCM's is discussed. Simple equivalent circuits and parameter extraction methods are presented.

AB - Silicon based Multi Chip Module (MCM-Si) technology offers high precision and high packing density compared with traditional PCB and ceramic thick film hybrid technologies. When used in RF-equipment, MCM-Si's suffer from severe signal loading and signal coupling via the substrate. In this paper modeling of passive elements on MCM's is discussed. Simple equivalent circuits and parameter extraction methods are presented.

U2 - 10.1238/Physica.Topical.079a00279

DO - 10.1238/Physica.Topical.079a00279

M3 - Article

SN - 0281-1847

VL - T79

SP - 279

EP - 282

JO - Physica Scripta

JF - Physica Scripta

ER -

RF-model extraction for passive components on MCM-Si materials

Abstract

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